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Abstract
The addition of bis(3-sulphopropyl) disulphide in Cu electroless plating results in Cu superfilling. However, the deposition rate of superfilling copper plating is decreased, which hinders its application for filling Cu into via holes of ultralarge scale integrations. In the present study, the effect of triethanolamine (TEA) on the deposition rate of electroless copper plating was investigated. The deposition rates of electroless plated copper both in traditional and superfilling copper plating were accelerated with an addition of TEA, which was attributed to a decrease in reaction activation energy of a dominant reduction reaction. X-ray diffractometry and atomic force microscopy measurements indicated that with an addition of TEA, the peak intensity ratio /(111)//(200) of electroless plated Cu film was increased and the average surface roughness was decreased.
