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Abstract
The electric conductivity of high purity silicon has been measured at elevated temperatures. Thin silicon rods were heated in a horizontal electric resistance furnace up to temperatures of 1120 °C. By passing a current through the rods and by measuring the resulting voltage drop, the conductivity was determined in the temperature range from 550 to 1120 °C. The data compare very well with reported literature values.
The electric conductivity of high purity silicon has been measured at elevated temperatures. Thin silicon rods were heated in a horizontal electric resistance furnace up to temperatures of 1120 °C. By passing a current through the rods and by measuring the resulting voltage drop, the conductivity was determined in the temperature range from 550 to 1120 °C. The data compare very well with reported literature values.
On a mesuré la conductivité électrique à des températures élevées du silicium de haute pureté. On a chauffé des tiges minces de silicium dans un four électrique horizontal à résistances jusqu'à des températures de 1120 °C. En passant un courant à travers les tiges et en mesurant la chute de potentiel qui en résultait, on a déterminé la conductivité dans la gamme de température de 550 à 1120 °C. Les données se comparent très favorablement aux valeurs rapportées dans la littérature.