Structural analysis of InGaAs tensile layers on InP

Abstract

Transmission electron microscopy and optical absorption measurements on In_xGa_1−xAs tensile layers grown on InP (001), having a range of In composition varying between 42·0 and 51·6% and thicknesses of 0·1 and 0·4 μm, have been carried out. The characteristics of the growth mode depending on strain and layer thickness are presented, showing the degradation of the epilayer with increasing mismatch. In these tensile layers, a random three-dimensional mode of growth leading to a very rough surface morphology has been found in the most mismatched layers studied.

MST/3330