New donor doping sources for molecular beam epitaxy of AlGaSb and AlGaAs

Abstract

Results obtained for the first time using Ga₂S₃ and Ga₂Se₃ compounds as sources of donor elements for the molecular beam epitaxy of Al_xGa_1−xSb (0≤x≤1) and Al_xGa_1−x As (0≤x≤0·4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be readily controlled up to a maximum of 5 × 10¹⁸ cm ⁻³. For A_xGa_1−xSb it was possible to compensate the high concentration of native acceptors and obtain n type conductivity over the full composition range of the alloy. In A_xGa_1−xSb donor related defects (DX centres) were observed.

MST/3331