THE PREPARATION AND PROPERTIES OF SELF-BONDED SILICON CARBIDE

Abstract

Dense self-bonded silicon carbide, prepared by impregnating with silicon pressed mixtures of silicon carbide and graphite, has been improved by attention to grading and composition. Treatment at 2000°C for ½ h has given a much greater degree of self-bonding. Porous self-bonded silicon carbide with a dense surface has also been prepared.

Notes

* Manuscript received 18 August 1961. Contribution to a Symposium on “Sintered High-Temperature Compounds”, to be held in London on 8 December 1961.