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Abstract
This paper describes work carried out to determine the impact-resistance of silicon carbide at room temperature and 1000°C. Samples of SiC were selected for testing that would fracture according to two different criteria: (1) stored energy; (2) Hertzian contact stress. The literature is extensively reviewed for impact-failure mechanisms but other appropriate work on SiC is shown to be sparse. Equations are developed that describe the main impact-resistance criteria and the influence of microstructure on impact cracking is discussed.
Notes
* Manuscript received 28 November 1968. Based on a paper presented at the Second European Symposium on Powder Metallurgy held at Stuttgart in May 1968.