Abstract
The creep behaviour of high-density silicon carbide has been examined under four-point transverse bending in air at temperatures from 1000 to 1300°C. Stresses in the range 0·207 GN m−2 (30 000 Ib in−2) to 0·496 GN m−2 (72000 lb in−2) were applied.
In tests lasting up to 3·6 Msec (1000 h) the creep strain (ϵp) increased with time (t) as ϵp = Atk where k was between 0·2 and 0·5. The dependence of A on stress (σ) and absolute temperature (T) was found to be with n between 1 and 2 and Q∼230 kJ mole−1 (55 kcal mole−1).
These results are compared with estimates of creep in SiC obtained by extrapolation of steady-state creep data from higher temperatures.
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Notes
* Manuscript received 27 November 1968. Based on a paper presented at the Second European Symposium on Powder Metallurgy held at Stuttgart in May 1968.