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Heinz Herzer
Heinz Herzer studied physics at the University of Heidelberg where he received the degree ofDiplom Physiker in 1967, and in 1971 the degree of Dr. rer. nat. He performed experimental work on ion implantation into silicon and germanium and the fabrication of semiconductor detectors for nuclear radiation at the Max Planck Institute for Nuclear Physics at Heidelberg from 1966 to 1973. He was a research associate from 1971 to 1973.
In 1973 he joined Wacker-Chemitronic and has been working on float zone silicon development and material characterization. In the past six years he completed various projects on the growth of large diameter float-zone crystals, float-zone silicon for extraterrestrial solar cells, and silicon NTD. Herzer was an advising member of the Spacelab Committee in the Ministry for Research and Technology at Bonn from 1973 to 1975. In 1977 he was chairman of the Third International Symposium on Silicon Materials Science and Technology in Philadelphia. In March 1979 he was appointed manager for float-zone silicon at Wacker-Chemitronic.