Change Of Nano Material Electrical Characteristics For Medical System Applications

Abstract

Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.

Keywords:

• electrical properties
• ntype semiconductor
• ptype semiconductor
• currentvoltage
• IV
• capacitancevoltage
• CV
• sensors

Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant No. 61574147), Zhejiang Provincial Natural Science Foundation for Distinguished Young Scholar (Grant No. LR17F040002), and the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20180021).

Disclosure

The authors report no conflicts of interest in this work.