Potentiality of IMPATT Devices as Terahertz Source: An Avalanche Response Time-based Approach to Determine the Upper Cut-off Frequency Limits

Abstract

Potentiality of Impact Avalanche Transit Time (IMPATT) devices based on different semiconductor materials such as InP, 4H-SiC, and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz (THz) frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on above mentioned materials at different millimeter-wave (mm-wave) and THz frequencies and the upper cut-off frequency limits of those devices are obtained from the avalanche response times at those mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of both InP and 4H-SiC DDR IMPATTs are 1.0 THz; whereas, the same is 5.0 THz in Wz-GaN DDR IMPATTs. The Wz-GaN DDR IMPATTs emerge as the most suitable devices for generation of THz frequencies due to their small avalanche response time, high DC to RF conversion ratio, and sufficiently high RF power output at THz frequencies. But, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs due to their higher output power densities. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

Keywords:

• Avalanche response time
• DDR IMPATTs
• Terahertz source
• Wide bandgap materials

Additional information

Notes on contributors

Aritra Acharyya

Aritra Acharyya received his M.Tech. degree from Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, W. B., India. Earlier, he obtained his B.E. Degree from Bengal Engineering and Science University, Shibpur, Howrah, W.B., India. He joined the Department of Electronics And Communication Engineering, S. K. F. G. I., Sir J. C. Bose School of Engineering, Mankundu, Hooghly, W. B., India, in 2010 as a lecturer. Presently, he has been working as an assistant professor in the same institution since 2011. He is the recipient of Pareshlal Dhar Bhowmik book award in the year 2010 for securing highest marks in M. Tech. (Radio Physics and Electronics) Examination 2010 of the University of Calcutta. His research interest is Millimeter-wave and Terahertz Semiconductor Devices more specifically IMPATT Devices. He is the first author of several research papers in different national and international journals and conference proceedings E-mail: [email protected]

J. P. Banerjee

J. P. Banerjee obtained B.Sc. (Hons.) and M.Sc. in Physics and Ph.D. in Radio Physics and Electronics from University of Calcutta. He worked as a senior scientist of a Department of Electronics project in Institute of Radio Physics and electronics, C.U. during 1986–1989. He joined the Department of Electronic Science, C.U. in 1989 as a reader. He has been working as a professor in the Institute of Radio Physics and Electronics, C.U. since 1998. He is the recipient of Indian National Science Academy Award of a visiting fellowship and Griffith Memorial Prize in Science of the Calcutta University in 1986. He is the principle co-author of more than 150 research papers in International Journals in the fields of Semiconductor Science and Technology, Microwave and Millimeter wave avalanche transit time devices and avalanche Photo Detectors. He has successfully carried out a number of research projects of Government of India on IMPATT diodes. A collaborative research work in the field of computer analysis, fabrication, and characterization of V-Band silicon double low high low IMPATTs was successfully carried out by Dr. Banerjee for the first time with Dr. J.F. Luy, the eminent German Scientist of Daimler Benz research centre. He is a Fellow of Institute of Electronics and Communication Engineers (IETE), a life member of society of EMI and EMC and Semiconductor Society, India. He is an expert committee member of All India Council of Technical Education and served as a referee for various technical journals. E-mail: [email protected]