Abstract
This paper presents a class-E, single-ended power amplifier (PA) for WLAN applications. This proposed circuit has a two-stage structure and adopts cascode class-E topology with self-biased technique that avoids using thick-oxide transistors and improves RF performance. The driver employing a current-reused technique can enhance the driving ability and power gain. Additionally, the efficiency is improved by inserting a series LC networks on drain node of switch transistor. The proposed PA is simulated by Advanced Design System (ADS) in TSMC 0.18-μ CMOS technology. With a 2.5-V power supply, the fully integrated CMOS PA achieves 21.5 dBm of maximum output power and 68.3% of power-added efficiency (PAE) at 2.4 GHz. It demonstrates a power gain of 45 dB and gives better output power at minimum input levels. The chip area including testing pads is 0.91 × 0.99 mm2.
Additional information
Notes on contributors
Sichun Du
Sichun Du received the M.E. degree in Computer Application Technology from Hunan University, Changsha, China. His current research interests include CMOS RFIC and UWB technology. email: [email protected]
Wenbin Huang
Wenbin Huang received the B.S. degree in 2011. Now he is studying towards the M.S. degree at the Hunan University. His research includes design and simulation of RF CMOS integrated circuits email: [email protected]
Chunhua Wang
Chunhua Wang is currently a Professor of the School of Information Science and Engineering, Hunan University, Changsha, China. His research interests include current mode circuit design, filtering, radio frequency circuit and wireless communications email: [email protected]
Hongxia Yin
Hongxia Yin received the M.E. degree in Computer Application Technology from Central South University, Changsha, China. Her current research interests include CMOS RFIC and Network coding technology. email: [email protected]
Zhiwen Liang
Zhiwen Liang is a teacher of the School of Information Science and Engineering Hunan University, Changsha, China. email: [email protected]