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Abstract
A new technique to calculate the channel electric field in Double-gate MOSFETs and Schottky barrier Double-gate MOSFETs (SB-DG-MOSFETs) in sub-threshold region is presented. 2D Poissons equation is solved in an analytical closed form with the conformal mapping technique. The estimated solution of the two-dimensional electric field with its complex components is analyzed with the bias conditions for accumulation and inversion regions, which have been applied and studied in detail. A comparison with data simulated by 2D TCAD Sentaurus simulator for channel lengths down to 22 nm was made and is in a good agreement to this simulation results.
Additional information
Notes on contributors
Mike Schwarz
Mike Schwarz received his diploma degree at University of Applied Sciences Giessen- Friedberg, Giessen, Germany, in 2008. He was awarded the Friedrich-Dessauer-Prize for the best diploma thesis about multiclass support vector machines.
In 2009, he received his M.S. degree in electrical engineering from the Universitat Rovira i Virgili, Tarragona, Spain.
In 2010, he obtained the URV Graduated Student Meeting on Electronic Engineering Award for the best oral presentation for a paper about an analytical model for the electric field in Schottky Barrier Double-gate MOSFETs.
Since 2008, he is working as research assistant in the Device Modeling Research Group at the Competence Center for Nanotechnology and Photonics at the Technische Hochschule Mittelhessen, Giessen, Germany.
He is currently with Technische Hochschule Mittelhessen and pursuing his Ph. D. degree in Tarragona as well. The main focus of his doctoral research is compact modeling of Schottky Barrier multiple-gate FETs.
His current research interests are Schottky Barrier MOSFET devices and compact modeling. E-mail: [email protected]
Thomas Holtij
Thomas Holtij received his diploma degree at University of Applied Sciences Giessen- Friedberg, Germany, in 2010. He obtained the Friedrich-Dessauer-Prize for the best diploma thesis about analytical modeling of the parasitic resistances in multiple-gate FETs.
He is currently with Technische Hochschule Mittelhessen and pursuing his M.S. degree in electrical engineering from the Universitat Rovira i Virgili, Tarragona, Spain.
His current research interests are Double- gate MOSFET devices and compact modeling. E-mail: [email protected]
Alexander Kloes
Alexander Kloes received his diploma and Ph. D. in electrical engineering at Technical University of Darmstadt, Solid-State Electronics Laboratory, Darmstadt, Germany, in 1993 and 1996, respectively.
Since 2002, he is Professor at Technische Hochschule Mittelhessen, Giessen, Germany. He is heading the Device Modeling Research Group at the Competence Center for Nanotechnology and Photonics.
His research interests are in semiconductor device modeling, especially for nanoscale MOS devices.
Prof. Kloes is associated member in COMON (Compact Modelling Network), an Industry Academia Partnership and Pathway funded by the 7th Framework Programme of the European Commission. In this context, he is contributing to the research group at Universitat Rovira i Virgili, Tarragona, Spain. Framework Programme, IAPP Project), contributing to the research group at Universitat Rovira i Virgili, Tarragona, Spain. E-mail: [email protected]
Benjamín Iñíguez
Benjamín Iñíguez received the B. S., the M. S., and the Ph. D. Degrees in physics from the University of the Balearic Islands (UIB), Spain, in 1989, 1992, and 1996, respectively. His doctoral research focused on the development of CAD models for short-channel bulk-Si and SOI MOSFETs.
From February 1997 to September 1998, he was working as a Postdoctoral Research Scientist at the ECSE Department, Rensselaer Polytechnic Institute (RPI), Troy, NY, in 1997-1998, where he studied advanced devices, such as short-channel a-Si and poly-Si TFTs, GaN HFETs and heterodimensional MESFETs.
From September 1998 to February 2001, he was a Research Scientist (Postdoctoral Marie-Curie Grant Holder) in the Microelectronics Laboratory, Universite Catholique de Louvain (UCL), Louvain-la-Neuve, Belgium, working on the characterization and modeling of thin-film and ultrathin-film SOI MOSFETs from DC to RF conditions.
In February 2001, he joined the Department of Electronic Engineering (DEEEA), Universitat Rovira i Virgili (URV), Tarragona, Spain, as Titular Professor. In 2004, he was awarded the Distinction of the Catalan Government for the Promotion of University Research. In 2007, he was awarded the IET Premium Award for a paper about charge transport in organic TFTs.
His current research interests are characterization and modeling of advanced electron devices, in particular nanoscale multiple-gate MOSFETs and organic and polymer TFTs. He is IEEE Senior Member from 2003, and IEEE EDS Distinguished Lecturer since 2004. In 2009, he obtained the ICREA Academia Prize. In 2010, he became Full Professor at the Universitat Rovira i Virgili (URV).
He has authored or co-authored more than 80 papers in international journals and a similar number in international conferences. He has participated in several European projects, and he is the leader of the “COMON” (Compact Modelling Network), an Industry Academia Partnership and Pathway funded by the 7th Framework Programme of the European Commission. E-mail: [email protected]