Investigations of Hot-carrier-induced Degradation for 700 V n-LDMOS Transistor Under Different Stress Conditions

Abstract

The hot-carrier reliability of a 700 V n-LDMOS transistor under different stress conditions is investigated in detail. For the high drain voltage (V_ds) condition, the degradation of the saturate drain current (I_dsat) is different from the on-resistance (R_on) degradation for the change of the dominated degradation mechanism. Moreover, the serious R_on degradation has identical variation tendency with substrate current (I_sub) because the maximum impact ionization occurs at the surface of the drift region. However, for the high gate voltage (V_gs) condition, the most important degradation is the threshold voltage (V_th). We found that the V_th degradation has an exponential relationship with V_gs. In addition, it is also observed that the thick field oxide results in strong and rapid recovery of the R_on degradation.

Keywords:

• Degradation
• Hot-carrier
• Substrate current (I_sub)
• 700 V n-LDMOS

Additional information

Notes on contributors

Chunwei Zhang

Chunwei Zhang was born in Shandong province, China, in 1988. He received the B.S. degree in Applied Physics from Shandong Normal University, China, in 2009. Currently, he is working toward the Ph.D. degree in Microelectronics, Department of Electrical Engineering, Sourtheast University, China. His research interest is on the reliability of high voltage power device. E-mail: [email protected]

Siyang Liu

Siyang Liu was born in Anhui province, China, in 1987. He received the B.S. degree in Microelectronics from Hefei University of Technology, China, in 2008. Currently, he is working toward the M.S. degree in Microelectronics, Department of Electrical Engineering, Southeast University, China. His research interest is on the reliability of high voltage power devices. E-mail:[email protected]

Weifeng Sun

Weifeng Sun was born in Jiangsu province, China, in 1977. He received the B.S., M.S. and Ph.D. degrees in electronic engineering from Southeast University, in 2000, 2003 and 2007, respectively. His research interests mainly include new power device design, power IC, power device model, power IC and RF device design. He has authored 26 Chinese patents and has authored or co-authored more than 40 papers. E-mail: [email protected]

Tingting Huang

Tingting Huang was born in Jiangsu province, China, in 1988. She received the B.S. degree in Microelectronics from Nanjing University of Posts and Telecommunications, China, in 2011. Currently, she is now studying in Southeast University, China, for M.S. degree. In 2011, she joined the National ASIC system engineering research center, China, where she did research on the reliability of high voltage power devices. E-mail: [email protected]

Chaohui Yu

Chaohui Yu was born in Hebei province, China, in 1988. She received the B.S. degree in Electronic technology and information from Tangshan University, China, in 2012. Currently, he is working toward the B.S. degree in integrated circuit design, Southeast University, China. Her research interest is on the reliability of high voltage power devices. E-mail: [email protected]