Studies on Anisotype Si/Si_1-xGe_x Heterojunction DDR IMPATTs: Efficient Millimeter-wave Sources at 94 GHz Window

Abstract

In this paper, an attempt is made to investigate the millimeter-wave performance of anisotype Si/Si_1-xGe_x heterojunction Double-drift region (DDR) Impact Avalanche Transit Time (IMPATT) devices operating at 94 GHz window frequency by using a generalized double-iterative computer method based on drift-diffusion model developed by the authors. Simulation study on both anisotype Np and nP type Si/Si_1-xGe_x heterojunction DDR IMPATTs for Ge mole fractions, x = 0.1 and x = 0.3, is carried out and their mm-wave properties are compared with a Si homojunction DDR IMPATT operating at the same frequency. Results show that significant improvements in DC to RF conversion efficiency and RF power output can be achieved in Si/Si_1-xGe_x heterojunction DDR IMPATTs as compared to their Si homojunction counterpart. It is observed that the mm-wave performance of nP Si_0.7Ge_0.3/Si heterojunction DDR as regards to RF power output and conversion efficiency is best among all the devices under consideration. DC to RF conversion efficiency and continuous wave (CW) RF power output of nP Si_{0 7}Ge_{0 3}/Si DDR are obtained as 20.04% and 731.7 mW, respectively, near 94 GHz; whereas for Si DDR, the same parameters are obtained as 10.40% and 609.3 mW, respectively.

Keywords:

• Anisotype Si/Si_1-xGe_x heterojunctions
• DDR IMPATTs
• Millimeter-wave.

Additional information

Notes on contributors

Aritra Acharyya

Aritra Acharyya was born in 1986 at Serampore, W. B., India. He received his M. Tech. degree Radio Physics and Electronics from Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, W. B., India. Earlier, he obtained his B. E. degree in Electronics and Telecommunication Engineering from Bengal Engineering and Science University, Shibpur, Howrah, W.B., India. Presently, he is pursuing his PhD from University of Calcutta under Prof. (Dr.) J. P. Banerjee, Radio Physics and Electronics Department, University of Calcutta, Kolkata, India. He joined the Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, Mankundu, Hooghly, W. B., India in 2010 as a lecturer. He has been working as an assistant professor in the same institution since 2011. He is also working as a guest faculty of Biomedical Instrumentation department of University of Calcutta, India. He is the recipient of Pareshlal Dhar Bhowmik book award in the year 2010 for securing highest marks in M. Tech. (Radio Physics and Electronics) Examination 2010 of the University of Calcutta. His research interest is millimeter-wave and terahertz semiconductor devices and their optical control. He is the principle coauthor of more than 40 research papers in different national and international journals and conference proceedings E-mail: [email protected]

J. P. Banerjee

J. P. Banerjee was born in 1947. He obtained B.Sc. (Hons.) and M.Sc. in Physics and Ph.D. in Radio Physics and Electronics from University of Calcutta. He worked as a senior scientist of a Department of Electronics project in Institute of Radio Physics and electronics, C.U. during 1986–1989. He joined the Department of Electronic Science, C.U. in 1989 as a reader. He has been working as a professor in the Institute of Radio Physics and Electronics, C.U. since 1998. He is the recipient of Indian National Science Academy Award of a visiting fellowship and Griffith Memorial Prize in Science of the Calcutta University in 1986. He is the principle co-author of more than 150 research papers in International Journals in the fields of Semiconductor Science and Technology, Microwave and Millimeter wave avalanche transit time devices and avalanche Photo Detectors. He has successfully carried out a number of research projects of Government of India on IMPATT diodes. A collaborative research work in the field of computer analysis, fabrication and characterization of V-Band silicon double low high low IMPATTs was successfully carried out by Dr. Banerjee for the first time with Dr. J. F. Luy the eminent German Scientist of Daimler Benz research centre. He is a Fellow of Institute of Electronics and Communication Engineers (IETE), a life member of society of EMI and EMC and Semiconductor Society, India. He is an expert committee member of All India Council of Technical Education and served as a referee for various technical journals. E-mail: [email protected]