Abstract
Recently, the pinched hysteresis loop phenomenon discovered in many nanoscale devices has been a hot research topic. This paper proposes a new mathematical framework for those hysteresis systems to accommodate those discontinuity or not “well-defined” situations in canonical model of memristive system. In particular, two special subtypes are pointed out to fit the hitherto memory device characterization data. By Atting the I-V hysteresis loop, the effects of the transfer function in output equation on hysteresis loop properties are analyzed.
Additional information
Notes on contributors
Zhiwei Li
Zhiwei Li received double B.S. degrees, one is in Telecommunications Engineering with Management from Beijing University of Posts and Telecommunications (BUPT), Beijing, China and the other is in electrical engineering with first class honors from Queen Mary, University of London, London, UK, in 2011. He is currently pursuing the M.S. degree from National University of Defense Technology (NUDT), China. His current main research interests focus on circuit design, memory technology, memristor modeling and the theory study of the memristive system. E-mail: [email protected]
Haijun Liu
Haijun Liu received the B.S. degree in electrical information engineering from Shandong University of Technology, in 2004, and the Ph.D. degree in information and telecommunication systems from National University of Defense Technology (NUDT), China, in 2010. Currently, he is a Lecturer with the Department of Electrical Science and Technology, in the school of Electrical Science and Engineering, NUDT. His main research interests include theory study of memristor and memristive system, and applications based on two-terminal resistive switches. E-mail: [email protected]
Xin Xu
Xin Xu received the B.S. degree in electronics and the Ph.D. degree in information and telecommunication systems from National University of Defense Technology (NUDT), China, in 1996 and 2001 respectively. Currently, he is a Professor with the Department of Electrical Science and Technology, in the school of Electrical Science and Engineering, NUDT. His research interests include memristor and memristive system, basic and advanced circuit device and the signal processing. E-mail: [email protected]