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Advances in Physics Volume 22, 1973 - Issue 5
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Original Articles

Amorphous germanium III. Optical properties

G.A.N. Connell Division of Engineering and Applied Physics, Harvard University, Cambridge, Mass., 02138
,
R.J. Temkin Division of Engineering and Applied Physics, Harvard University, Cambridge, Mass., 02138
&
W. Paul Division of Engineering and Applied Physics, Harvard University, Cambridge, Mass., 02138
Pages 643-665 | Published online: 28 Jul 2006

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Erwin Hüger, Jochen Stahn & Harald Schmidt. (2023) Activation energy of diffusion determined from a single in-situ neutron reflectometry experiment. Materials Research Letters 11:1, pages 53-59.
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A. Nayak & S. Bhunia. (2014) Microstructure and dielectric functions of Ge nanocrystals embedded between amorphous Al2O3 films: study of confinement and disorder. Journal of Experimental Nanoscience 9:5, pages 463-474.
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ByP. Wickboldt, S.J. Jones, F.C. Marques, D. Pang, W.A. Turner, A.E. Wetsel, W. Paul & J.H. Chen. (1991) A study of the properties of hydrogenated amorphous germanium produced by r.f. glow discharge as the electrode gap is varied the link between microstructure and optoelectronic properties. Philosophical Magazine B 64:6, pages 655-674.
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John Robertson. (1983) Electronic structure of amorphous semiconductors. Advances in Physics 32:3, pages 361-452.
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J. Robertson. (1979) Theory of doping of amorphous tetrahedrally bonded semiconductors. Philosophical Magazine B 40:1, pages 31-49.
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G.N. Greaves, S.R. Elliott & E.A. Davis. (1979) Amorphous arsenic. Advances in Physics 28:1, pages 49-141.
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G.N. Greaves, E.A. Davis & J. Bordas. (1976) Optical properties of amorphous arsenic. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 34:2, pages 265-290.
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