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Original Articles

Requirements for Piezoelectric Thin Film Applications to Radio Frequency Acoustic Wave Devices

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Pages 73-80 | Received 03 Aug 2008, Accepted 31 Dec 2008, Published online: 20 Sep 2010

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An-Liang Zhang, Xiang-Ting Fu & Yan Zha. (2013) Surface Acoustic Wave Enhancing Drop-Drop Microextraction with an Original Position Loop for Stabilizing Drops. Ferroelectrics 445:1, pages 152-160.
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An-Liang Zhang & Yan Zha. (2012) A Paper-Based Microfluidic Switch Based on Surface Acoustic Wave. Ferroelectrics 437:1, pages 149-159.
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Articles from other publishers (5)

Mohd Haidar Hamzah, Jamilah Karim, Aliza Aini Md Ralib & Anis Nurashikin Nordin. (2017) Design and analysis of a boosted pierce oscillator using MEMS SAW resonators. Microsystem Technologies 24:1, pages 587-594.
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Aliza Aini Md Ralib, Ossama Mortada, Jean Christophe Orlianges, Aurelian Crunteanu, Matthieu Chatras & Anis Nurashikin Nordin. (2017) Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform. Journal of Materials Science: Materials in Electronics 28:12, pages 9132-9138.
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K. Hashimoto, S. Sato, A. Teshigahara, T. Nakamura & K. Kano. (2013) High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 60:3, pages 637-642.
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Ken-ya Hashimoto, Takamasa Fujii, Shuhei Sato, Tatsuya Omori, Changjun Ahn, Akihiko Teshigahara, Kazuhiko Kano, Hitoshi Umezawa & Shin-ichi Shikata. (2012) High Q surface acoustic wave resonators in 2–3 GHz range using ScAlN/single crystalline diamond structure. High Q surface acoustic wave resonators in 2–3 GHz range using ScAlN/single crystalline diamond structure.
Marta Clement, J. Olivares, J. Capilla, J. Sangrador & E. Iborra. (2012) Influence of crystal quality on the excitation and propagation of surface and bulk acoustic waves in polycrystalline AlN films. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 59:1, pages 128-134.
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