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Ferroelectrics Volume 405, 2010 - Issue 1
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SECTION G: FERROELECTRIC THIN AND THICK FILMS

Characterization of Pt/BiFeO3/ZrO2/Si Capacitors for Memory Applications

Xueguang Han Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
,
Dan Xie Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
,
Rui Li Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
,
Tianling Ren Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
&
Litian Liu Institute of Microelectronics, Tsinghua University, Beijing, 100084, P.R.China
Pages 236-241 | Received 23 Aug 2009, Accepted 25 Sep 2009, Published online: 01 Dec 2010

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Hoai Thuong Nguyen & Phan Thi Bich Thao. (2023) Dielectric relaxation and domain-wall freezing in (CH3NH3)5Bi2Cl11 ferroelectric crystal. Ferroelectrics 603:1, pages 26-33.
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Articles from other publishers (1)

Li Wu & Ya Yang. (2022) Narrow Bandgap Inorganic Ferroelectric Thin Film Materials. Advanced Materials Interfaces 9:32, pages 2201415.
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