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Ferroelectrics Volume 442, 2013 - Issue 1
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SECTION N: Thin Films

Electrical Conduction Mechanisms in PZT Thin Films Deposited by RF Magnetron Sputtering Method

M. V. Kamenshchikov Department of Ferroelectrics and Piezoelectrics Physics, Tver State University, 170002, Tver, Russia
,
A. V. Solnyshkin Department of Ferroelectrics and Piezoelectrics Physics, Tver State University, 170002, Tver, Russia; National Research University of Electronic Technology “MIET”, 124498, Zelenograd, Moscow, Russia
,
A. A. Bogomolov Department of Ferroelectrics and Piezoelectrics Physics, Tver State University, 170002, Tver, Russia
&
I. P. Pronin Ioffe Physical Technical Institute RAS, 194021 St, Petersburg, Russia
Pages 101-106 | Received 11 Nov 2012, Published online: 24 May 2013

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Read on this site (1)

M. V. Kamenshchikov, A. V. Solnyshkin & I. P. Pronin. (2017) Peculiarities of C-V characteristics of PZT films depending on annealing temperature. Ferroelectrics 508:1, pages 108-114.
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Articles from other publishers (3)

Betul Akkopru-Akgun, Wanlin Zhu, Clive A. Randall, Michael T. Lanagan & Susan Trolier-McKinstry. (2019) Polarity dependent DC resistance degradation and electrical breakdown in Nb doped PZT films. APL Materials 7:12.
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L. A. Delimova, E. V. Guschina, D. S. Seregin, K. A. Vorotilov & A. S. Sigov. (2017) Unexpected behavior of transient current in thin PZT films caused by grain-boundary conduction. Journal of Applied Physics 121:22.
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Mikhail V. Kamenshchikov, Alexander V. Solnyshkin & Igor P. Pronin. (2016) Dielectric response of capacitor structures based on PZT annealed at different temperatures. Physics Letters A 380:47, pages 4003-4007.
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