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Ferroelectrics Volume 37, 1981 - Issue 1
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Original Articles

The effect of temperature on properties of RF Sputtered BaTiO3 films

J. C. Olson AFWAL/Materials Laboratory, Wright-Patterson Air Force Base, Ohio, 45433
,
D. F. Stevison AFWAL/Materials Laboratory, Wright-Patterson Air Force Base, Ohio, 45433
&
I. Bransky Universal Energy Systems, Inc., 3195 Plainfield Road, Dayton, Ohio, 45432
Pages 685-686 | Published online: 07 Feb 2011

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SeifA. Nasser & DavidA. Payne. (2000) Structural, microstructural, optical and dielectric properties of Ba0.75Sr0 25TiO3 thin films deposited by sol-gel. Philosophical Magazine B 80:6, pages 1153-1165.
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Articles from other publishers (18)

Wangu Kang, Ji Sang Ahn & Jeong Hwan Han. (2021) Seed layer mediated growth of high dielectric and low leakage BaTiO3 thin film using two-step sputtering process. Ceramics International 47:18, pages 25826-25831.
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C.O. Amorim, K. Sloyan, M.R. Correia, A.A.C.S. Lourenço, M.S. Dahlem & V.S. Amaral. (2020) Constrained titanohematite formation at BTO/Fe interfaces deposited by RF-sputtering. Journal of Alloys and Compounds 828, pages 154244.
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Yechan Kim, Joonsuk Park, Jeongwoo Shin, Jihwan An & Jungwan Cho. (2019) Thickness-dependent thermal conductivity of ultrathin (< 100 nm) barium titanate films. Ceramics International 45:1, pages 681-685.
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Peter Schindler, Yongmin Kim, Dickson Thian, Jihwan An & Fritz B. Prinz. (2016) Plasma-enhanced atomic layer deposition of BaTiO3. Scripta Materialia 111, pages 106-109.
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Jihwan An, Takane Usui, Manca Logar, Joonsuk Park, Dickson Thian, Sam Kim, Kihyun Kim & Fritz B. Prinz. (2014) Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO 3 Thin Films . ACS Applied Materials & Interfaces 6:13, pages 10656-10660.
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Hong-Hsin Huang, Moo-Chin Wang, Chung-Yuan Chen, Nan-Chung Wu & Huey-Jiuan Lin. (2006) Effect of deposition parameters on the growth rate and dielectric properties of the Ba(SnxTi1−x)O3 thin films prepared by radio frequency magnetron sputtering. Journal of the European Ceramic Society 26:15, pages 3211-3219.
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Moo-Chin Wang, Cheng-Chi Tsai, Nan-Chung Wu & Kun-Ming Hung. (2002) Structural and dielectric characterization of the (Ba1−xSrx)(Ti0.9Sn0.1)O3 thin films deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering. Journal of Applied Physics 92:4, pages 2100-2107.
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M. Adachi, Y. Akishige, T. Asahi, K. Deguchi, K. Gesi, K. Hasebe, T. Hikita, T. Ikeda, Y. Iwata, M. Komukae, T. Mitsui, E. Nakamura, N. Nakatani, M. Okuyama, T. Osaka, A. Sakai, E. Sawaguchi, Y. Shiozaki, T. Takenaka, K. Toyoda, T. Tsukamoto & T. Yagi. 2002. Oxides. Oxides 1 9 .
M. Adachi, Y. Akishige, T. Asahi, K. Deguchi, K. Gesi, K. Hasebe, T. Hikita, T. Ikeda, Y. Iwata, M. Komukae, T. Mitsui, E. Nakamura, N. Nakatani, M. Okuyama, T. Osaka, A. Sakai, E. Sawaguchi, Y. Shiozaki, T. Takenaka, K. Toyoda, T. Tsukamoto & T. Yagi. 2002. Oxides. Oxides 1 12 .
Jin Wook Jang, Su Jin Chung, Woon Jo Cho, Taek Sang Hahn & Sang Sam Choi. (1997) Thickness dependence of room temperature permittivity of polycrystalline BaTiO3 thin films by radio-frequency magnetron sputtering. Journal of Applied Physics 81:9, pages 6322-6327.
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Q.X. Jia, L.H. Chang & W.A. Anderson. (1995) Low leakage current BaTiO3 thin film capacitors using a multilayer construction. Thin Solid Films 259:2, pages 264-269.
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H. Kawano, K. Morii & Y. Nakayama. (1993) Effects of crystallization on structural and dielectric properties of thin amorphous films of (1− x )BaTiO 3 ‐ x SrTiO 3 ( x =0–0.5, 1.0) . Journal of Applied Physics 73:10, pages 5141-5146.
Crossref
Q.X. Jia, Z.Q. Shi & W.A. Anderson. (1992) BaTiO3 thin film capacitors deposited by r.f. magnetron sputtering. Thin Solid Films 209:2, pages 230-239.
Crossref
B. S. Kwak, K. Zhang, E. P. Boyd, A. Erbil & B. J. Wilkens. (1991) Metalorganic chemical vapor deposition of BaTiO3 thin films. Journal of Applied Physics 69:2, pages 767-772.
Crossref
P. Li, B. Gittleman & T.-M. Lu. (2011) Low Temperature Deposition of High Dielectric Constant Thin Films for Decoupling Capacitor Applications. MRS Proceedings 203.
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S.L. Swartz. (1990) Topics in electronic ceramics. IEEE Transactions on Electrical Insulation 25:5, pages 935-987.
Crossref
L.H. Parker & A.F. Tasch. (1990) Ferroelectric materials for 64 Mb and 256 Mb DRAMs. IEEE Circuits and Devices Magazine 6:1, pages 17-26.
Crossref
T. L. Rose, E. M. Kelliher, A. N. Scoville & S. E. Stone. (1984) Characterization of rf-sputtered BaTiO3 thin films using a liquid electrolyte for the top contact. Journal of Applied Physics 55:10, pages 3706-3714.
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