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VIII. Electrical properties of thin films

Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process

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Pages 75-82 | Received 23 Aug 1998, Published online: 09 Mar 2011

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S. Uhlig, M. Nicolai, A. Schönecker & A. Michaelis. (2009) Investigation of domain related topography formation during chemical mechanical polishing of piezoelectric ceramic material. Materials Science and Technology 25:11, pages 1321-1324.
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A. Pignolet, C. Harnagae, H.N. Lee, A. Visinoiu, S. Senz & D. Hesse. (2001) Ferroelectricity in epitaxial pulsed laser deposited bismuth-layered perovskite thin films of different crystallographic orientations. Ferroelectrics 258:1, pages 197-208.
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L. Pintilie, C. Dragoi, R. Radu, A. Costinoaia, V. Stancu & I. Pintilie. (2010) Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt–ZnO–Pb(Zr0.2Ti0.8)O3–Pt heterostructures. Applied Physics Letters 96:1.
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Dietrich Hesse, Sung Kyun Lee & Ulrich Gösele. (2005) Microstructure of (104)‐oriented Bi 3.25 La 0.75 Ti 3 O 12 and Bi 3.54 Nd 0.46 Ti 3 O 12 ferroelectric thin films on multiply twinned SrRuO 3 /Pt(111) electrodes on YSZ(100)‐buffered Si(100) . physica status solidi (a) 202:12, pages 2287-2298.
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M. Alexe, I. Radu & I. Szafraniak. 2004. Wafer Bonding. Wafer Bonding 451 471 .

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