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Original Articles

Process/physics-based threshold voltage model for nano-scaled double-gate devices

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Pages 139-148 | Received 30 Mar 2003, Accepted 20 Feb 2004, Published online: 19 Aug 2006

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K. Kim, K. K. Das & C.-T. Chuang. (2007) High-density data-retention power gating structure using a four-terminal double-gate device. International Journal of Electronics 94:4, pages 403-412.
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M. S. Alam, T. C. Lim & G. A. Armstrong. (2006) Analog performance of double gate SOI transistors. International Journal of Electronics 93:1, pages 1-18.
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Articles from other publishers (10)

Sanjay Kumar, Ekta Goel, Gopal Rawat, Kunal Singh, Mirgender Kumar, Sarvesh Dubey & S. Jit. 2014. Physics of Semiconductor Devices. Physics of Semiconductor Devices 263 266 .
M. Reyboz, P. Martin, T. Poiroux & O. Rozeau. (2009) Continuous model for independent double gate MOSFET. Solid-State Electronics 53:5, pages 504-513.
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Marina Reyboz, Olivier Rozeau & Thierry Poiroux. 2009. Planar Double-Gate Transistor. Planar Double-Gate Transistor 55 88 .
Saibal Mukhopadhyay, Keunwoo Kim, Jae-Joon Kim, Shih-Hsien Lo, Rajiv V. Joshi, Ching-Te Chuang & Kaushik Roy. (2007) Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices. Microelectronics Journal 38:8-9, pages 931-941.
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Deblina Sarkar, Samiran Ganguly, Deepanjan Datta, A. A. P. Sarab & Sudeb Dasgupta. (2007) Modeling of Leakages in Nano-Scale DG MOSFET to Implement Low Power SRAM: A Device/Circuit Co-Design. Modeling of Leakages in Nano-Scale DG MOSFET to Implement Low Power SRAM: A Device/Circuit Co-Design.
S. Mukhopadhyay, K. Kim, C.T. Chuang & K. Roy. (2006) Modeling and Analysis of Leakage Currents in Double-Gate Technologies. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25:10, pages 2052-2061.
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Abhinav Kranti & G. Alastair Armstrong. (2006) Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations. Solid-State Electronics 50:3, pages 437-447.
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Tao Chuan Lim & G. Alastair Armstrong. (2005) Parameter sensitivity for optimal design of 65nm node double gate SOI transistors. Solid-State Electronics 49:6, pages 1034-1043.
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Saibal Mukhopadhyay, Keunwoo Kim, Ching-Te Chuang & Kaushik Roy. (2005) Modeling and analysis of total leakage currents in nanoscale double gate devices and circuits. Modeling and analysis of total leakage currents in nanoscale double gate devices and circuits.
S. Mukhopadhyay, Keunwoo Kim, Jae-Joon Kim, Shih-Hsien Lo, R.V. Joshi, Ching-Te Chuang & K. Roy. (2005) Modeling and Analysis of Gate Leakage in Ultra-thin Oxide Sub-50nm Double Gate Devices and Circuits. Modeling and Analysis of Gate Leakage in Ultra-thin Oxide Sub-50nm Double Gate Devices and Circuits.

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