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Original Articles

Highly configurable capacitive interface circuit for tri‐axial MEMS microaccelerometer

Pages 945-955 | Received 06 Mar 2011, Accepted 11 Nov 2011, Published online: 02 Feb 2012

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Cherifa Tahanout, Hakim Tahi, Bouchera Nadji & Lotfi Hocini. (2020) Simple and fast simulation approach to investigate the NBTI effect on suspended gate MOS devices. International Journal of Electronics Letters 8:4, pages 355-369.
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Articles from other publishers (2)

Xianshan Dong, Shaohua Yang, Junhua Zhu, Yunfei En & Qinwen Huang. (2018) Method of Measuring the Mismatch of Parasitic Capacitance in MEMS Accelerometer Based on Regulating Electrostatic Stiffness. Micromachines 9:3, pages 128.
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H. G. Momen, M. Yazgi, R. Kopru & A. Naderi Saatlo. (2017) An Accurate CMOS Interface Small Capacitance Variation Sensing Circuit for Capacitive Sensor Applications. Circuits, Systems, and Signal Processing 36:12, pages 4908-4918.
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