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International Journal of Electronics Volume 107, 2020 - Issue 7
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Research Article

600-V shielded trench split-gate VDMOS improving the figure of merit

Xiaopei ChenInstitute of Microelectronics, School of Information Science and Technology, Southwest Jiaotong University, Sichuan, People’s Republic of ChinaView further author information
,
Quanyuan FengInstitute of Microelectronics, School of Information Science and Technology, Southwest Jiaotong University, Sichuan, People’s Republic of ChinaCorrespondence[email protected]
ORCID Iconhttps://orcid.org/0000-0003-4139-2015View further author information
ORCID Icon &
Tao JinInstitute of Microelectronics, School of Information Science and Technology, Southwest Jiaotong University, Sichuan, People’s Republic of ChinaView further author information
Pages 1083-1097 | Received 18 May 2019, Accepted 28 Oct 2019, Published online: 20 Nov 2019

Citations (3)

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Read on this site (1)

Xiaopei Chen & Quanyuan Feng. (2021) A 600V split-gate VDMOS with integrated trench MOS barrier Schottky. International Journal of Electronics 108:10, pages 1676-1690.
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Articles from other publishers (2)

Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li & Yintang Yang. (2022) Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation. Micromachines 13:4, pages 573.
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Himanshu Khanna. (2020) Symbol error probability evaluation for PSK modulation schemes in generalized non-Gaussian noise channels. International Journal of Communication Systems, pages e4450.
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