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Original Articles

High resolution measurements of energy spectra of protons scattered from silicon crystals in the case of planar channelling

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Pages 91-97 | Published online: 12 Sep 2006

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Read on this site (4)

E.A. Kovaleva & E.T. Shipatov. (1985) Quasichanneling of ions in crystals. II. Mechanisms of oscillations and shoulders of backscattering yield. Radiation Effects 88:3-4, pages 305-315.
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E. Kührt & R. Wedell. (1979) The oscillatory behaviour op backscattering spectra from small depths in planar channelling. Radiation Effects 43:6, pages 253-257.
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H.E. Roosendaal, W.H. Kool, W.F. Van Der Weg & J.B. Sanders. (1974) Critical angles and minimum yields for planar channeling. Radiation Effects 22:2, pages 89-99.
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Articles from other publishers (18)

W. N. Lennard & H. Geissel. 1991. Interaction of Charged Particles with Solids and Surfaces. Interaction of Charged Particles with Solids and Surfaces 347 363 .
P.F.A. Alkemade, W.C. Turkenbrg & W.F. Van Der Weg. (1987) The energy loss of medium-energy He+ ions backscattered from a Cu(100) surface. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 28:2, pages 161-174.
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K. Jousten, H.P. Frerichs & S. Kalbitzer. (1986) Lattice localization of Ta in Si by planar channeling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 15:1-6, pages 322-327.
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V.Ya. Chumanov, G.P. Pokhil & A.F. Tulinov. (1984) Localization of the impurity atoms in single-crystals using the oscillations of the rutherford backscattering yield in planar channeling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2:1-3, pages 744-746.
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. 1982. Materials Analysis by Ion Channeling. Materials Analysis by Ion Channeling 235 295 .
H. E. Roosendaal, B. Schmiedeskamp, H. H. Hubbes & H. O. Lutz. (2006) Planar channeling trajectories in diamond and silicon. physica status solidi (b) 107:2, pages 677-687.
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E. Kührt & R. Wedell. (2006) Theoretical description of planar channeling process at small depths. physica status solidi (b) 107:2, pages 665-675.
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E. Kührt & F. Täubner. (1980) Measurements of the ratio between planar and random stopping power for 80 to 300 keV protons in silicon. Physica Status Solidi (a) 61:2, pages 513-519.
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H.E. Roosendaal, B. Schmiedeskamp, H.H. Hubbes & H.O. Lutz. (1980) Half-wavelength and stopping power for planar-channeled protons in silicon and diamond single crystals. Nuclear Instruments and Methods 170:1-3, pages 119-122.
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G Carter & DG Armour. (1980) The relationship between vacuum and atomic collisions in solids. Vacuum 30:1, pages 1-17.
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John H. Barrett. (1979) Potential and stopping-power information from planar-channeling oscillations. Physical Review B 20:9, pages 3535-3542.
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A.G. Wagh & J.S. Williams. (1978) Effect of planar oscillations on implanted distributions measured by low-angle He+ backscattering. Physics Letters A 65:2, pages 175-176.
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W.C. Turkenburg, W. Soszka, F.W. Saris, H.H. Kersten & B.G. Colenbrander. (1976) Surface structure analysis by means of Rutherford scattering: Methods to study surface relaxation. Nuclear Instruments and Methods 132, pages 587-602.
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F. Abel, M. Bruneaux, C. Cohen, G. Della Mea, A.V. Drigo, S. Lo Russo & P. Mazzoldi. (1976) Study of the structure of axial and planar aligned backscattering spectra in vanadium. Nuclear Instruments and Methods 132, pages 197-199.
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J. A. Ellison. (1975) Flux distribution calculations in planar channeling. Physical Review B 12:11, pages 4771-4779.
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F. Abel, G. Amsel, M. Bruneaux, C. Cohen & A. L'Hoir. (1975) Backscattering study and theoretical investigation of planar channeling processes. I. Experimental results. Physical Review B 12:11, pages 4617-4627.
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J.S. Williams. (1975) The optimization of a rutherford backscattering geometry for enhanced depth resolution. Nuclear Instruments and Methods 126:2, pages 205-215.
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John H. Barrett. (1973) Breakdown of the Statistical-Equilibrium Hypothesis in Channeling. Physical Review Letters 31:26, pages 1542-1545.
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