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Radiation Effects Volume 37, 1978 - Issue 3-4
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Original Articles

The mechanisms of impurity redistribution on laser-annealing of ion-implanted semiconductors

A. V. Dvurechensky Institute of Semiconductor Physics, Siberian Branch Academy of Sciences of the USSR, Novosibirsk
,
G. A. Kachurin Institute of Semiconductor Physics, Siberian Branch Academy of Sciences of the USSR, Novosibirsk
&
A. Kh. Antonenko Institute of Semiconductor Physics, Siberian Branch Academy of Sciences of the USSR, Novosibirsk
Pages 179-181 | Received 15 Aug 1977, Published online: 13 Sep 2006

Citations (11)

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IanW. Boyd. (1983) A review of laser beam applications for processing silicon. Contemporary Physics 24:5, pages 461-490.
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Articles from other publishers (10)

A.V. Dvurechenskii. 2017. Advances in Semiconductor Nanostructures. Advances in Semiconductor Nanostructures 367 381 .
A. K. Shukla & K. P. Jain. (1986) Raman scattering from ultraheavily-ion-implanted and laser-annealed silicon. Physical Review B 34:12, pages 8950-8953.
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GAETANO FOTI & EMANUELE RIMINI. 1982. Laser Annealing of Semiconductors. Laser Annealing of Semiconductors 203 245 .
P. H. Tsien, H. Ryssel, D. Röschenthaler & I. Ruge. (1981) Nd:YAG laser annealing of arsenic-implanted silicon: Dependence upon scanning speed and power density. Journal of Applied Physics 52:7, pages 4775-4779.
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S. U. Campisano, M. G. Grimaldi, P. Baeri, G. Foti & E. Rimini. (1980) Laser induced reorder in Pb implanted Ge. Applied Physics 22:2, pages 201-203.
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B.J. Sealy. (1980) Laser annealing of ion implanted semiconductórs. Journal of Crystal Growth 48:4, pages 655-665.
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J.C. Muller & P. Siffert. (1980) Emploi de lasers dans la technologie des photopiles. Revue de Physique Appliquée 15:3, pages 611-629.
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D.R. Myers, P. Roitman, S. Mayo & D. Horowitz. 1980. Laser and Electron Beam Processing of Materials. Laser and Electron Beam Processing of Materials 285 290 .
M. G. Grimaldi, P. Baeri, S. U. Campisano, G. Foti & E. Rimini. (1979) Laser Induced As Profile Broadening in Amorphous Silicon Layers. Physica Status Solidi (a) 54:1, pages 55-59.
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G. Foti & G. della Mea. (2007) Lattice location of boron implanted silicon after laser annealing. Lettere Al Nuovo Cimento Series 2 21:3, pages 89-93.
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