Citations (9)
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K.F. Heidemann. (1981) Complex-refractive-index profiles of 4 MeV Ge ion-irradiation damage in silicon. Philosophical Magazine B 44:4, pages 465-485.
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Articles from other publishers (7)
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J. Z. Yuan, R. Hartmann, I. V. Verner & J. W. Corbett. (2011) Temperature Dependence of Ion-Beam-Induced In-Plane Stress in Silicon. MRS Proceedings 268.
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J. Tatarkiewicz. (1989) Optical Effects of High Energy Implantations in Semiconductors. physica status solidi (b) 153:1, pages 11-47.
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D. Hagmann. (1983) Residual disorder in silicon after anneal of high dose through oxide arsenic implants. Nuclear Instruments and Methods in Physics Research 209-210, pages 683-687.
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W. Wesch, E. Wilk & K. Hehl. (1982) Radiation damage and near edge optical properties of nitrogen implanted gallium arsenide. physica status solidi (a) 70:1, pages 243-248.
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