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Radiation Effects Volume 66, 1982 - Issue 1-2
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Original Articles

Annealing studies of ion-implanted gaas in the 40–300 K range

N. P. Tognetti Department of Electrical Engineering, University of Salford, Salford M5 4WT, U.K.
,
G. Carter Department of Electrical Engineering, University of Salford, Salford M5 4WT, U.K.; Centro Atomico Bariloche, 8400, Bariloche, Argentina
,
D. V. Stevanovic Department of Engineering Physics and Institute for Materials Research, McMaster University, Hamilton, Ontario, Canada, L8S 4M1
&
D. A. Thompson Department of Engineering Physics and Institute for Materials Research, McMaster University, Hamilton, Ontario, Canada, L8S 4M1
Pages 15-20 | Received 08 Feb 1982, Published online: 19 Aug 2006

Citations (21)

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Read on this site (3)

J. Krynicki, A. Kozanecki, W. Szyszko & R. Groetzschel. (1990) Crystalline to amorphous transformations in ion implanted GaP. Radiation Effects and Defects in Solids 115:1-3, pages 219-226.
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G. Carter, M.J. Nobes & I.S. Tashlykov. (1984) The influence of dose rate and analysis procedures on measured damage in P+ ion implanted GaAs. Radiation Effects 85:1, pages 37-43.
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M. Slater, M.J. Nobes & G. Carter. (1984) Disorder production in Si+ implanted InP. Radiation Effects 83:3-4, pages 219-231.
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Articles from other publishers (18)

G Zollo. (2002) XHRTEM observations of different damage structures in high temperature Zn+ implanted GaAs. Vacuum 69:1-3, pages 97-101.
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G Zollo, G Vitali, C Pizzuto, D Manno & M Kalitzova. (2002) Temperature and ion flux dependence of damage structures in Zn+ implanted and laser annealed GaAs. Journal of Physics D: Applied Physics 35:21, pages 2830-2836.
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G. Zollo, C. Pizzuto, G. Vitali, M. Kalitzova & D. Manno. (2000) High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs. Journal of Applied Physics 88:4, pages 1806-1810.
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M. W. Bench, I. M. Robertson, M. A. Kirk & I. Jenčič. (2000) Production of amorphous zones in GaAs by the direct impact of energetic heavy ions. Journal of Applied Physics 87:1, pages 49-56.
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B Breeger, E Wendler, Ch Schubert & W Wesch. (1999) In situ RBS investigation of damage production during ion implantation in AlxGa1−xAs at 20 K. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148:1-4, pages 468-473.
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B.W. Lagow, B.A. Turkot, I.M. Robertson, J.J. Coleman, S.D. Roh, D.V. Forbes, L.E. Rehn & P.M. Baldo. (1998) Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms. IEEE Journal of Selected Topics in Quantum Electronics 4:4, pages 606-618.
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J. Zuk, H. Kiefte & M. J. Clouter. (1993) Investigation of ion-implanted GaP layers by Brillouin scattering. Journal of Applied Physics 73:10, pages 4951-4954.
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W. Wesch, E. Wendler & K. Gärtner. (1992) Nucleation of point defects in low-fluence ion-implanted GaAs and GaP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 63:1-2, pages 52-55.
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M.W. Bench, I.M. Robertson & M.A. Kirk. (1991) Transmission electron microscopy investigation of the damage produced in individual displacement cascades in GaAs and GaP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 59-60, pages 372-376.
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E. Wendler, W. Wesch & G. Götz. (1991) Defect production in ion implanted GaAs, GaP and InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 55:1-4, pages 789-793.
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M. W. Bench, I. M. Robertson & M. A. Kirk. (2011) Energetic Electron Beam Induced Recrystallization of Ion Implantation Damage in Semiconductors. MRS Proceedings 235.
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R. P. Sharma, R. Bhadra, L. E. Rehn, P. M. Baldo & M. Grimsditch. (1989) Crystalline to amorphous transformation in GaAs during Kr ion bombardment: A study of elastic behavior. Journal of Applied Physics 66:1, pages 152-155.
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E. Wendler, W. Wesch & G. Götz. (1989) Defects in Weakly Damaged Ion-Implanted GaAs and Other III–V Semiconductors. Physica Status Solidi (a) 112:1, pages 289-299.
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W. Wesch, E. Wendler, G. Götz & N. P. Kekelidse. (1989) Defect production during ion implantation of various A III B V semiconductors . Journal of Applied Physics 65:2, pages 519-526.
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J.P. DONNELLY. 1989. III-V Semiconductor Materials and Devices. III-V Semiconductor Materials and Devices 331 428 .
M. W. Bench, I. M. Robertson & M. A. Kirk. (2011) In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide. MRS Proceedings 100.
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W. Wesch & G. Götz. (1986) Rapid annealing of ion-implanted GaAs. physica status solidi (a) 94:2, pages 745-766.
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C. Ascheron & H. Neumann. (1986) Microhardness-damage density relationship in proton and helium implanted GaP single crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 18:1-6, pages 161-164.
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