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Radiation Effects Volume 60, 1982 - Issue 1-4
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Review article

Primary recoil spectra and subcascade effects in ion bombardment experiments

R. M. More Lawrence Livermore Laboratories, Livermore, CA, 94550, U.S.A.
&
J. A. Spitznagel Westinghouse Research and Development Center, Pittsburgh, PA, 15235, U.S.A.
Pages 27-33 | Received 20 Jan 1981, Accepted 17 Jun 1981, Published online: 27 Sep 2006

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J.H. Chang, W.J. Choyke, N.J. Doyle, J. Greggi, P. Hegland, J.N. McGruer, J.A. Spitznagel, J.R. Townsend & C.F. Tzeng. (1982) Experimental evidence for slight mass dependence of the final damage state due to energetic ions. Radiation Effects 60:1-4, pages 73-84.
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Articles from other publishers (14)

Wei CHEN, Yin-Hong LUO, Wu-Ying MA, Chen-Hui WANG, Li-Li DING, ZuJun WANG, Yan LIU, Bo MEI, Chong-Bin YAO, Chao ZENG, Xiao-Qiang GUO, Zhong-Ming WANG & Wei WU. (2023) Simulation test technique for nuclear and space radiation effects. SCIENTIA SINICA Physica, Mechanica & Astronomica 53:7, pages 272003.
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Y. Linden, W.R. Iliffe, G. He, M. Danaie, D.X. Fischer, M. Eisterer, S.C. Speller & C.R.M. Grovenor. (2022) Analysing neutron radiation damage in YBa 2 Cu 3 O 7– x high‐temperature superconductor tapes . Journal of Microscopy 286:1, pages 3-12.
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C.D. Hardie, G.R. Odette, Y. Wu, S. Akhmadaliev & S.G. Roberts. (2016) Mechanical properties and plasticity size effect of Fe-6%Cr irradiated by Fe ions and by neutrons. Journal of Nuclear Materials 482, pages 236-247.
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J. R. Srour & J. W. Palko. (2013) Displacement Damage Effects in Irradiated Semiconductor Devices. IEEE Transactions on Nuclear Science 60:3, pages 1740-1766.
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Jeffrey H. Warner, Christophe Inguimbert, Mark E. Twigg, Scott R. Messenger, Robert J. Walters, Manuel J. Romero & Geoffrey P. Summers. (2008) Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs. IEEE Transactions on Nuclear Science 55:6, pages 3016-3024.
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J. R. Srour & J. W. Palko. (2006) A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices. IEEE Transactions on Nuclear Science 53:6, pages 3610-3620.
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J.R. Srour, C.J. Marshall & P.W. Marshall. (2003) Review of displacement damage effects in silicon devices. IEEE Transactions on Nuclear Science 50:3, pages 653-670.
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A.H. Johnston. (2003) Radiation effects in light-emitting and laser diodes. IEEE Transactions on Nuclear Science 50:3, pages 689-703.
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. 2002. Handbook of Nanophase and Nanostructured Materials. Handbook of Nanophase and Nanostructured Materials 301 343 .
F. F. Komarov. (1994) Effects of high-energy ion implantation into metals. Russian Physics Journal 37:5, pages 423-436.
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C. J. Dale, P. W. Marshall, G. P. Summers, E. A. Wolicki & E. A. Burke. (1989) Displacement damage equivalent to dose in silicon devices. Applied Physics Letters 54:5, pages 451-453.
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J. A. Spitznagel, Susan Wood, W. J. Choyke, R. P. Devaty & J. Ruan. (2011) Amorphization and Annealing of 6H SiC Implanted with N-Type, P-Type or Isovalent Dopants. MRS Proceedings 147.
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C.J. Dale, P.W. Marshall, E.A. Burke, G.P. Summers & E.A. Wolicki. (1988) High energy electron induced displacement damage in silicon. IEEE Transactions on Nuclear Science 35:6, pages 1208-1214.
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Fu-Zhai Cui & Heng-De Li. (1985) A Monte Carlo study of cascade fluctuations. Journal of Nuclear Materials 133-134, pages 353-356.
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