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Original Articles

Disorder production in Si+ implanted InP

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Pages 219-231 | Received 09 Mar 1984, Published online: 19 Aug 2006

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J. Krynicki, A. Kozanecki, W. Szyszko & R. Groetzschel. (1990) Crystalline to amorphous transformations in ion implanted GaP. Radiation Effects and Defects in Solids 115:1-3, pages 219-226.
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Articles from other publishers (7)

E. Wendler, T. Opfermann & P. I. Gaiduk. (1997) Ion mass and temperature dependence of damage production in ion implanted InP. Journal of Applied Physics 82:12, pages 5965-5975.
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U. G. Akano, I. V. Mitchell & F. R. Shepherd. (1993) Influence of dose rate and temperature on the accumulation of Si-implantation damage in indium phosphide. Applied Physics Letters 62:14, pages 1670-1672.
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B. Zeroual & G. Carter. (1990) The influence of sb impurities on ion implantation induced damage in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 51:4, pages 396-399.
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E. Wendler, W. Wesch & G. Götz. (1989) Defects in Weakly Damaged Ion-Implanted GaAs and Other III–V Semiconductors. Physica Status Solidi (a) 112:1, pages 289-299.
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W. Wesch, E. Wendler, G. Götz & N. P. Kekelidse. (1989) Defect production during ion implantation of various A III B V semiconductors . Journal of Applied Physics 65:2, pages 519-526.
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Alberto Gras-Marti & Uffe Littmark. 1988. Materials Modification by High-fluence Ion Beams. Materials Modification by High-fluence Ion Beams 257 284 .
A. B. Campbell, A. R. Knudson, W. J. Stapor, G. Summers, M. A. Xapsos, M. Jessee, T. Palmer, R. Zuleeg & C. J. Dale. (1986) Particle Damage Effects in GaAs JFET Test Structures. IEEE Transactions on Nuclear Science 33:6, pages 1435-1441.
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