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Original Articles

Core structure of a screw dislocation in a diamond-like structure

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Pages 609-620 | Received 08 Feb 1999, Accepted 05 May 1999, Published online: 11 Aug 2009

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Read on this site (5)

Lili Huang, Rui Wang & Shaofeng Wang. (2019) A new reconstruction core of the 30° partial dislocation in silicon. Philosophical Magazine 99:3, pages 347-375.
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L. Pizzagalli & P. Beauchamp. (2004) First principles determination of the Peierls stress of the shuffle screw dislocation in silicon. Philosophical Magazine Letters 84:11, pages 729-736.
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L. Pizzagalli, P. Beauchamp & J. Rabier. (2003) Undissociated screw dislocations in silicon: Calculations of core structure and energy. Philosophical Magazine 83:10, pages 1191-1204.
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Wei Cai, VasilyV. Bulatob, Jinpeng Chang, Ju Li & Sidney Yip. (2003) Periodic image effects in dislocation modelling. Philosophical Magazine 83:5, pages 539-567.
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K. Edagawa, H. Koizumi, Y. Kamimura & T. Suzuki. (2000) Temperature dependence of the flow stress of III–V compounds. Philosophical Magazine A 80:11, pages 2591-2608.
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Jun Li, Kun Luo & Qi An. (2023) Atomic structure, stability, and dissociation of dislocations in cadmium telluride. International Journal of Plasticity 163, pages 103552.
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C. Baruffi & C. Brandl. (2021) On the structure of (111) twist grain boundaries in diamond: atomistic simulations with Tersoff-type interatomic potentials. Acta Materialia 215, pages 117055.
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Wu-Rong Jian, Shuozhi Xu & Irene J. Beyerlein. (2021) On the significance of model design in atomistic calculations of the Peierls stress in Nb. Computational Materials Science 188, pages 110150.
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Lili Huang & Shaofeng Wang. (2019) Structure and energy of the 〈11¯〉 screw dislocation in silicon using generalized Peierls theory. Journal of Applied Physics 125:14.
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Ph. Carrez, J. Godet & P. Cordier. (2015) Atomistic simulations of ½〈1 1 0〉 screw dislocation core in magnesium oxide. Computational Materials Science 103, pages 250-255.
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L. Pizzagalli. (2014) Stability and mobility of screw dislocations in 4H, 2H and 3C silicon carbide. Acta Materialia 78, pages 236-244.
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Jihoon Han, Mingyu Park, Arim Lee, Dongwoo Sohn, Jaeshin Park & Seyoung Im. (2014) Temperature dependence of screw dislocation mobility on shuffle-set of silicon. Metals and Materials International 20:5, pages 899-907.
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M. Matsubara, J. Godet, L. Pizzagalli & E. Bellotti. (2013) Properties of threading screw dislocation core in wurtzite GaN studied by Heyd-Scuseria-Ernzerhof hybrid functional. Applied Physics Letters 103:26.
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Z. Li, N. Mathew & R.C. Picu. (2013) Dependence of Peierls stress on lattice strains in silicon. Computational Materials Science 77, pages 343-347.
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X. W. Zhou, D. K. Ward, J. E. Martin, F. B. van Swol, J. L. Cruz-Campa & D. Zubia. (2013) Stillinger-Weber potential for the II-VI elements Zn-Cd-Hg-S-Se-Te. Physical Review B 88:8.
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L Pizzagalli, J Godet, J Guénolé, S Brochard, E Holmstrom, K Nordlund & T Albaret. (2013) A new parametrization of the Stillinger–Weber potential for an improved description of defects and plasticity of silicon. Journal of Physics: Condensed Matter 25:5, pages 055801.
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H. L. Zhang & C. J. Yuan. (2012) Properties of Shockley partials in InP: core width, Peierls barrier and stress. The European Physical Journal B 85:3.
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Laurent Pizzagalli, Julien Godet, Julien Guénolé & Sandrine Brochard. (2011) Dislocation cores in silicon: new aspects from numerical simulations. Journal of Physics: Conference Series 281, pages 012002.
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J Guénolé, J Godet & L Pizzagalli. (2010) Determination of activation parameters for the core transformation of the screw dislocation in silicon. Modelling and Simulation in Materials Science and Engineering 18:6, pages 065001.
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Keonwook Kang & Wei Cai. (2010) Size and temperature effects on the fracture mechanisms of silicon nanowires: Molecular dynamics simulations. International Journal of Plasticity 26:9, pages 1387-1401.
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Shaofeng Wang, Huili Zhang, Xiaozhi Wu & Ruiping Liu. (2010) Theoretical calculation of the dislocation width and Peierls barrier and stress for semiconductor silicon. Journal of Physics: Condensed Matter 22:5, pages 055801.
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Maria Ganchenkova & Risto M. Nieminen. 2010. Handbook of Silicon Based MEMS Materials and Technologies. Handbook of Silicon Based MEMS Materials and Technologies 179 219 .
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L. Pizzagalli, J.-L. Demenet & J. Rabier. (2009) Theoretical study of pressure effect on the dislocation core properties in semiconductors. Physical Review B 79:4.
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Cai-Zhuang Wang, Gun-Do Lee, Ju Li, Sidney Yip & Kai-Ming Ho. (2008) Atomistic simulation studies of complex carbon and silicon systems using environment-dependent tight-binding potentials. Scientific Modeling and Simulation SMNS 15:1-3, pages 97-121.
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Cai-Zhuang Wang, Gun-Do Lee, Ju Li, Sidney Yip & Kai-Ming Ho. 2009. Scientific Modeling and Simulations. Scientific Modeling and Simulations 97 121 .
I. Belabbas, G. Nouet & Ph. Komninou. (2007) Atomic core configurations of the -screw basal dislocation in wurtzite GaN. Journal of Crystal Growth 300:1, pages 212-216.
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H. Koizumi & T. Suzuki. (2005) Motion of dislocation kinks in a simple model crystal. Materials Science and Engineering: A 400-401, pages 76-79.
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