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Philosophical Magazine A Volume 40, 1979 - Issue 5
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Original Articles

The nucleation mechanism for oxidation–induced stacking faults in silicon crystals containing surface damage

C. M. Shevltn Department of Metallurgical Engineering, College of Mines, The University of Arizona, Tucson, Arizona, 85721, U.S.A.; Optical Coating Laboratory Inc., Santa Rosa, California, 95402, U.S.A.
&
L. J. Demer Department of Metallurgical Engineering, College of Mines, The University of Arizona, Tucson, Arizona, 85721, U.S.A.
Pages 685-699 | Received 22 Jan 1979, Accepted 08 Jun 1979, Published online: 13 Sep 2006

Citations (11)

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A. Bourret, J. Desseaux & A. Renault. (1982) Core structure of the Lomer dislocation in germanium and silicon. Philosophical Magazine A 45:1, pages 1-20.
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Articles from other publishers (10)

Volker Naumann, Dominik Lausch, Angelika Hähnel, Jan Bauer, Otwin Breitenstein, Andreas Graff, Martina Werner, Sina Swatek, Stephan Großer, Jörg Bagdahn & Christian Hagendorf. (2014) Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells. Solar Energy Materials and Solar Cells 120, pages 383-389.
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Marika Gunji, Ann F. Marshall & Paul C. McIntyre. (2011) Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation. Journal of Applied Physics 109:1.
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. 2002. Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements. Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements 1 9 .
M. Kittler, C. Ulhaq-Bouillet & V. Higgs. (1995) Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level. Journal of Applied Physics 78:7, pages 4573-4583.
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S Mahajan & L C Kimerling. 1992. Concise Encyclopedia of Semiconducting Materials & Related Technologies. Concise Encyclopedia of Semiconducting Materials & Related Technologies xvii xxiii .
S. Mahajan. (1989) Growth- and processing-induced defects in semiconductors. Progress in Materials Science 33:1, pages 1-84.
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C. Claeys, H. Bender, G. Declerck, J. Van Landuyt, R. Van Overstraeten & S. Amelinckx. (1983) Impact of high temperature processing on bulk defects in czochralski silicon. Physica B+C 116:1-3, pages 148-161.
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I. G. Salisbury. (2006) Defects in implanted and Czochralski silicon. Crystal Research and Technology 18:1, pages 15-20.
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C. Jourdan, J. Gastaldi, J. Derrien, M. Bienfait & J. M. Layet. (1982) Synchrotron x-ray topographic observation of defect evolution at the Si- Si3N4 interface. Applied Physics Letters 41:3, pages 259-261.
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I.G. Salisbury. (1982) Defects in implanted silicon after oxidation. Acta Metallurgica 30:3, pages 627-632.
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