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Original Articles

Diffusion of indium in GaSb

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Pages 447-458 | Received 09 May 1979, Accepted 03 Oct 1979, Published online: 27 Sep 2006

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Read on this site (2)

D. Wbiler & H. Mehrer. (1984) Self-diffusion of gallium and antimony in GaSb. Philosophical Magazine A 49:2, pages 309-325.
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G. Edelin & D. Mathiot. (1980) A model for the determination of the defect concentrations in III–V compounds. Philosophical Magazine B 42:1, pages 95-110.
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Articles from other publishers (22)

Jeong-Hun Shin, Hyun-Wook Jung, Woo-Shik Jung & Jin-Hong Park. (2014) Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb). Materials Chemistry and Physics 143:3, pages 1536-1539.
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I. V. Belova, D. Shaw & G. E. Murch. (2009) Limits of the ratios of tracer diffusivities for diffusion by vacancy pairs: Application to compound semiconductors. Journal of Applied Physics 106:11.
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M.F Chioncel, C Dı́az-Guerra, J Piqueras, J Vincent, V Bermúdez & E Diéguez. (2004) Cathodoluminescence study of InxGa1−xSb crystals grown by the Bridgman method. Journal of Crystal Growth 268:1-2, pages 52-58.
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C. W. Pei, J. B. Héroux & W. I. Wang. (2004) Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 22:3, pages 1460-1462.
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M.F. Chioncel, C. Diaz-Guerra, J. Piqueras, J. Vincent, V. Bermudez & E. Dieguez. (2004) Cathodoluminescence characterization of InGaSb crystals. Cathodoluminescence characterization of InGaSb crystals.
D Shaw. (2003) Native defects and self-diffusion in GaSb. Semiconductor Science and Technology 18:7, pages 627-632.
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. 2003. Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.. Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. 1 11 .
M. Hakala, M. J. Puska & R. M. Nieminen. (2002) Native defects and self-diffusion in GaSb. Journal of Applied Physics 91:8, pages 4988-4994.
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H. Bracht, S. P. Nicols, E. E. Haller, J. P. Silveira & F. Briones. (2001) Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures. Journal of Applied Physics 89:10, pages 5393-5399.
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H. Bracht, S. P. Nicols, W. Walukiewicz, J. P. Silveira, F. Briones & E. E. Haller. (2000) Large disparity between gallium and antimony self-diffusion in gallium antimonide. Nature 408:6808, pages 69-72.
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P Hidalgo, B Méndez, J Piqueras, P S Dutta & E Dieguez. (1999) Effect of In doping in GaSb crystals studied by cathodoluminescence. Semiconductor Science and Technology 14:10, pages 901-904.
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P. S. Dutta, H. L. Bhat & Vikram Kumar. (1997) The physics and technology of gallium antimonide: An emerging optoelectronic material. Journal of Applied Physics 81:9, pages 5821-5870.
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Masayuki Hasaka, Takao Morimura, Kunihiro Hisatsune, Yasuo Uchiyama & Shin-ichiro Kondo. (1993) Diffusion of boron in copper and a AuCu alloy. Scripta Metallurgica et Materialia 29:7, pages 971-974.
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Masayuki Hasaka, Takao Morimura, Yasuo Uchiyama, Shin-ichiro Kondo, Tetsuya Watanabe, Kunihiro Hisatsune & Tatsuji Furuse. (1993) Diffusion of copper, aluminum and boron in nickel. Scripta Metallurgica et Materialia 29:7, pages 959-962.
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A.F.W. Willoughby. 1992. Concise Encyclopedia of Semiconducting Materials & Related Technologies. Concise Encyclopedia of Semiconducting Materials & Related Technologies 102 108 .
H. Siethoff, H. G. Brion & W. Schröter. (1991) Plastic Deformation of GaSb and the Influence of Stacking-Fault Energy on Dynamical Recovery of Semiconductors. Physica Status Solidi (a) 125:1, pages 191-201.
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D. Shaw. 1990. Diffusion in Materials. Diffusion in Materials 557 571 .
A.L. Greer & F. Spaepen. 1985. Synthetic Modulated Structures. Synthetic Modulated Structures 419 486 .
D Shaw. (1983) Evidence of divacancies in the diffusion of In in GaSb. Journal of Physics C: Solid State Physics 16:23, pages L839-L842.
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J. C. Pfister. 1983. Mass Transport in Solids. Mass Transport in Solids 321 331 .
J. Wilke, V. T. Bublik, V. B. Osvenskii, A. N. Popkov, A. G. Braginskaya & P. P. Kolchina. (2006) Investigation of the nature of point defects in in Te‐doped gallium antimonide. Crystal Research and Technology 18:6, pages 787-792.
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Yu. B. Bolkhovityanov. (2006) Isothermal contact of III–V saturated solutions with different III‐V substrates: Two mode of behavior. Crystal Research and Technology 18:5, pages 679-686.
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