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Philosophical Magazine A Volume 41, 1980 - Issue 4
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Original Articles

Climb asymmetry in degraded gallium arsenide lasers

P. W. Hutchinson Department of Physical Metallurgy and Science of Materials, University of Birmingham, Birmingham, B15 2TT, England
&
P. S. Dobson Department of Physical Metallurgy and Science of Materials, University of Birmingham, Birmingham, B15 2TT, England
Pages 601-614 | Received 18 May 1979, Accepted 06 Sep 1979, Published online: 27 Sep 2006

Citations (15)

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Read on this site (3)

R. Vardya & S. Mahajan. (1995) Mechanism of dislocation climb in binary and mixed III-V semiconductors. Philosophical Magazine A 71:3, pages 465-472.
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G. Wagner, P. Paufler & P. Rotsch. (1989) Climb of edge dislocations in plastically deformed GaP. Philosophical Magazine A 60:4, pages 507-523.
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D. Cherns & G. Feuillet. (1985) The mechanism of dislocation climb in GaAs under electron irradiation. Philosophical Magazine A 51:5, pages 661-674.
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Articles from other publishers (12)

Bei Shi, Yu Han, Qiang Li & Kei May Lau. (2019) 1.55-μm Lasers Epitaxially Grown on Silicon. IEEE Journal of Selected Topics in Quantum Electronics 25:6, pages 1-11.
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B. Kunert & K. Volz. 2019. Metalorganic Vapor Phase Epitaxy (MOVPE). Metalorganic Vapor Phase Epitaxy (MOVPE) 241 291 .
Bernardette Kunert, Yves Mols, Marina Baryshniskova, Niamh Waldron, Andreas Schulze & Robert Langer. (2018) How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches. Semiconductor Science and Technology 33:9, pages 093002.
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B. Kunert, W. Guo, Y. Mols, B. Tian, Z. Wang, Y. Shi, D. Van Thourhout, M. Pantouvaki, J. Van Campenhout, R. Langer & K. Barla. (2016) III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate. Applied Physics Letters 109:9.
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D. B. Holt & B. G. Yacobi. 2009. Extended Defects in Semiconductors. Extended Defects in Semiconductors 412 605 .
V. Swaminathan & Andrew S. Jordan. 1993. Imperfections in III/V Materials. Imperfections in III/V Materials 293 341 .
J. H. Neethling & H. C. Snyman. (1988) The formation of microsplits and damage rafts in proton-bombarded GaAs. Journal of Materials Science 23:8, pages 2697-2711.
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K.-H. Kuesters, B. C. De Cooman & C. B. Carter. (1985) Dislocation motion in GaAs/Al x Ga1− x As structures . Journal of Applied Physics 58:11, pages 4065-4073.
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S. K. Maksimov. (1984) Correlation between thermodynamic instability of AIIIBv heterocompositions and degradation of devices based on these materials. Physica Status Solidi (a) 83:2, pages 685-692.
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E. R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider & T. Wosinski. (1982) Identification of As Ga antisites in plastically deformed GaAs . Journal of Applied Physics 53:9, pages 6140-6143.
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V Swaminathan. (1982) Defects in GaAs. Bulletin of Materials Science 4:4, pages 403-442.
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P. M. Petroff. (2011) Luminescence Properties of GaAs Epitaxial Layers Grown By Liquid Phase Epitaxy and Molecular Beam Epitaxy. MRS Proceedings 2.
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