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Philosophical Magazine A Volume 51, 1985 - Issue 3
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Original Articles

Recovery of edge-defined film-fed grown silicon Dislocation/twin boundary interaction and mechanisms for twin-induced grain boundary formation

R. Gdeichmann Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York, 14853, U.S.A.; AdW der DDR, Institut für Festkörperphysik und Elektronen-mikroskopie, Weinberg 2, 4020, Halle, G.D.R.
,
M. D. Vaudin Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York, 14853, U.S.A.
&
D. G. Ast Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York, 14853, U.S.A.
Pages 449-467 | Received 28 Mar 1984, Accepted 20 Aug 1984, Published online: 13 Sep 2006

Citations (18)

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Read on this site (1)

R. Gleichmann, C. Frigeri & C. Pelosi. (1990) Hillock formation in InP epitaxial layers: A mechanism based on dislocation/stacking fault interactions. Philosophical Magazine A 62:1, pages 103-114.
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Articles from other publishers (17)

Yun Liu, Wenkai Liu, Tao Wei, Zhan Li, Minghao Li, Rongwang Dai, Zhongying Xue & Xing Wei. (2022) Investigation of microscale and nanoscale twin lamellae in monocrystalline silicon grown by Czochralski method. Materials Science in Semiconductor Processing 149, pages 106895.
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Lianxin Li, Tinghong Gao, Quan Xie, Qian Chen, Zean Tian, Yongchao Liang & Bei Wang. (2021) Pleomorphism and multidirectional combination of Si crystal nucleation during solidification. Journal of Materials Science 56:28, pages 15960-15970.
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H.Y. Wang, N. Usami, K. Fujiwara, K. Kutsukake & K. Nakajima. (2009) Microstructures of Si multicrystals and their impact on minority carrier diffusion length. Acta Materialia 57:11, pages 3268-3276.
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Mgidi Donald Dlamini. (1996) Electrical/electronic effects of titanium and iron impurities in EFG and FZ solar cell silicon: SPV/EBIC analysis. Solar Energy Materials and Solar Cells 43:4, pages 353-361.
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H.R. Khan, H. Frey & F. Banhart. (1996) Structural, morphological, electrical and luminous properties of undoped micro/nanocrystalline silicon films deposited by ion-assisted beam deposition techniques. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 112:1-4, pages 289-293.
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H.R. Khan, H. Frey & F. Banhart. 1996. Ion Beam Processing of Materials and Deposition Processes of Protective Coatings. Ion Beam Processing of Materials and Deposition Processes of Protective Coatings 289 293 .
J.P. Kalejs. (1993) Point defect, carbon and oxygen complexing in polycrystalline silicon. Journal of Crystal Growth 128:1-4, pages 298-303.
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D.G. Ast. 1992. Concise Encyclopedia of Semiconducting Materials & Related Technologies. Concise Encyclopedia of Semiconducting Materials & Related Technologies 210 217 .
C. Frigeri, R. Gleichmann, C. Pelosi & G. Attolini. (1991) Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxy. Materials Science and Engineering: B 10:3, pages 197-207.
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S.R. Singh & J.M. Howe. (1991) Effect of Ta on twinning in TiAl. Scripta Metallurgica et Materialia 25:2, pages 485-490.
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S. L. Hyland, C. Dubé & D. G. Ast. (1990) Investigation of the reversibility of deformation in silicon sheets. Journal of Electronic Materials 19:9, pages 873-879.
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J. Kątcki & D. Ast. 1989. Polycrystalline Semiconductors. Polycrystalline Semiconductors 175 179 .
Jerzy Katcki & Dieter Ast. (1988) Observation of radiation defects generated in edge defined film fed growth silicon ribbons under 400 kV irradiation in the high-resolution electron microscope. Journal of Applied Physics 64:3, pages 1125-1130.
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P. Veyssière. (1988) Dislocation core effects in plasticity. Revue de Physique Appliquée 23:4, pages 431-443.
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J. Ka̧tcki. (1987) A review of structural defect generation mechanisms in EFG ribbons. Journal of Crystal Growth 82:1-2, pages 197-202.
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S.Q. Feng, T.D. Sullivan & D.G. Ast. (1986) The microstructure of lass material. Solar Cells 17:2-3, pages 275-283.
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R. Gleichmann, B. Cunningham & D. G. Ast. (1985) Process-induced defects in solar cell silicon. Journal of Applied Physics 58:1, pages 223-229.
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