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Philosophical Magazine A Volume 53, 1986 - Issue 3
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Original Articles

On deformation twins in silicon single crystals

K. Yasutake Department of Precision Engineering, Faculty of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565, Japan
,
J. D. Stephenson Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 1000, Berlin 33, F.R. Germany
,
M. Umeno Department of Precision Engineering, Faculty of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565, Japan
&
H. Kawabe Department of Precision Engineering, Faculty of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565, Japan
Pages L41-L47 | Received 18 Nov 1985, Accepted 18 Dec 1985, Published online: 27 Sep 2006

Citations (11)

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Y. Androussi, G. Vanderschaeve & A. Lefebvre. (1989) Slip and twinning in high-stress-deformed GaAs and the influence of doping. Philosophical Magazine A 59:6, pages 1189-1204.
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Articles from other publishers (10)

Yu Hong, Ning Zhang & Mohsen Asle Zaeem. (2018) Metastable phase transformation and deformation twinning induced hardening-stiffening mechanism in compression of silicon nanoparticles. Acta Materialia 145, pages 8-18.
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G. Wagner & P. Paufler. (1993) Nucleation of dislocations and twins within heteroepitaxial In1−xGaxAs layers grown on (001) InP under tensile stress conditions. Physica Status Solidi (a) 138:2, pages 389-402.
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G Vanderschaeve, D Caillard & J.P Peyrade. (1992) Direct observation of microtwin formation at crack tips in InP. Scripta Metallurgica et Materialia 26:4, pages 609-614.
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G. Wagner & P. Paufler. (1991) Microtwinning in stress-relaxed In 1 – x Ga x As/(001) InP hetero-epitaxial layers . Zeitschrift für Kristallographie 195:1-2, pages 17-29.
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U. Dahmen, K.H. Westmacott, P. Pirouz & R. Chaim. (1990) The martensitic transformation in silicon—II. crystallographic analysis. Acta Metallurgica et Materialia 38:2, pages 323-328.
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A. Lefebvre & G. Vanderschaeve. (1988) The origin of microtwinning in room temperature indented undoped and n-doped GaAs crystals. Physica Status Solidi (a) 107:2, pages 647-653.
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J. M. Dowling, J. M. Corbett & H. W. Kerr. (1987) Growth mechanisms of modified eutectic silicon. Journal of Materials Science 22:12, pages 4504-4513.
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B.C. De Cooman & C.B. Carter. (2020) Glide of extended dislocation in III-V compounds. Proceedings, annual meeting, Electron Microscopy Society of America 45, pages 308-311.
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Kiyoshi Yasutake, Shinji Shimizu & Hideaki Kawabe. (1987) Analysis of the effective stresses acting on twinning partial dislocations in silicon. Journal of Applied Physics 61:3, pages 947-955.
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Kiyoshi Yasutake, Shinji Shimizu, Masataka Umeno & Hideaki Kawabe. (1987) Velocity of twinning partial dislocations in silicon. Journal of Applied Physics 61:3, pages 940-946.
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