Citations (7)
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C. Levade, A. Faress & G. Vanderschaeve. (1994) A TEM in situ investigation of dislocation mobility in the II–VI semiconductor compound ZnS A quantitative study of the cathodoplastic effect. Philosophical Magazine A 69:5, pages 855-870.
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A. Faress, C. Levade & G. Vanderschaeve. (1993) TEM in situ investigation of dislocation mobility in II-VI semiconductor compound ZnS cathodoplastic effect and the Peierls mechanism. Philosophical Magazine A 68:1, pages 97-112.
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M. Fnaiech, F. Reynaud, A. Couret & D. Caillard. (1987) A TEM in situ study of dislocation glide in a III-V compound (InSb). Philosophical Magazine A 55:4, pages 405-423.
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Lu And & D.J. H. Cockayne. (1986) Partial separations of extended α and β dislocations in II–VI semiconductors. Philosophical Magazine A 53:3, pages 307-320.
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Articles from other publishers (3)
K Maeda, K Suzuki, Y Yamashita & Y Mera. (2000) Dislocation motion in semiconducting crystals under the influence of electronic perturbations. Journal of Physics: Condensed Matter 12:49, pages 10079-10091.
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K. Sasaki, T. Murase & H. Saka. (1994) In-situ transmission electron microscopy of grain boundaries in CuGa2. Ultramicroscopy 56:1-3, pages 184-192.
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V. I. Nikolaichick & I. I. Khodos. (2011) A review of the determination of dislocation parameters using strong‐ and weak‐beam electron microscopy. Journal of Microscopy 155:2, pages 123-167.
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