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Philosophical Magazine A Volume 56, 1987 - Issue 5
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Original Articles

Atomic structure of dislocations and dipoles in silicon

A. S. Nandedkar Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, 27695-7916, U.S.A.
&
J. Narayan Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, 27695-7916, U.S.A.
Pages 625-639 | Received 19 Mar 1987, Accepted 23 Mar 1987, Published online: 20 Aug 2006

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S. Senkader, K. Jurkschat, D. Gambaro, R.J. Falster & P.R. Wilshaw. (2001) On the locking of dislocations by oxygen in silicon. Philosophical Magazine A 81:3, pages 759-775.
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L. Fedina, A. Gutakovskii, A. Aseev, J. Van Landuyt & J. Vanhellemont. (1998) On the mechanism of {111}-defect formation in silicon studied by in situ electron irradiation in a high resolution electron microscope. Philosophical Magazine A 77:2, pages 423-435.
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JamesE. Angelo & MichaelJ. Mills. (1995) Investigations of the misfit dislocation structure at a CdTe(001)/ga As(001) interface using Stillinger-Weber potentials and high-resolution transmission electron microscopy. Philosophical Magazine A 72:3, pages 635-649.
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A.S. Nandedkar, G.R. Srinivasan, J.J. Estabil & A. Domenicucci. (1993) Atomistic simulation of void nucleation in aluminium lines. Philosophical Magazine A 67:2, pages 391-406.
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J. Narayan & A.S. Nandedkar. (1991) Atomic structure and energy of grain boundaries in silicon, germanium and diamond. Philosophical Magazine B 63:5, pages 1181-1192.
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A.S. Nandedkar & J. Narayan. (1990) Atomic structure of dislocations in silicon, germanium and diamond. Philosophical Magazine A 61:6, pages 873-891.
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Articles from other publishers (39)

Derek OlsonChristoph Ortner, Yangshuai WangLei Zhang. (2023) Elastic Far-Field Decay from Dislocations in Multilattices. Multiscale Modeling & Simulation 21:4, pages 1379-1409.
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Jagdish Narayan & Roger Narayan. (2022) Discovery of Double Helix and Impact on Nanoscale to Mesoscale Crystalline Structures. ACS Omega 7:29, pages 25853-25859.
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Ce Sun, Tadas Paulauskas, Fatih G. Sen, Guoda Lian, Jinguo Wang, Christopher Buurma, Maria K. Y. Chan, Robert F. Klie & Moon J. Kim. (2016) Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface. Scientific Reports 6:1.
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J. Kioseoglou, Ph. Komninou & Th. Karakostas. (2008) Interatomic potential calculations of III(Al, In)–N planar defects with a III‐species environment approach. physica status solidi (b) 245:6, pages 1118-1124.
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J.D. Murphy, S. Senkader, R.J. Falster & P.R. Wilshaw. (2006) Oxygen transport in Czochralski silicon investigated by dislocation locking experiments. Materials Science and Engineering: B 134:2-3, pages 176-184.
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Dov Sherman & Ilan Be'ery. (2004) Dislocations Deflect and Perturb Dynamically Propagating Cracks. Physical Review Letters 93:26.
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Armando Giannattasio, Semih Senkader, Robert J. Falster & Peter R. Wilshaw. (2004) The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon. Computational Materials Science 30:1-2, pages 131-136.
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A. Giannattasio, S. Senkader, S. Azam, R.J. Falster & P.R. Wilshaw. (2003) The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers. Microelectronic Engineering 70:1, pages 125-130.
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Eberhard Blank. 2003. Thin-Film Diamond I. Thin-Film Diamond I 49 144 .
D. Shilo, D. Sherman, I. Beery & E. Zolotoyabko. (2002) Large Local Deflections of a Dynamic Crack Front Induced by Intrinsic Dislocations in Brittle Single Crystals. Physical Review Letters 89:23.
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Antoine Béré & Anna Serra. (2002) Atomic structure of dislocation cores in GaN. Physical Review B 65:20.
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S. Senkader, K. Jurkschat, P.R. Wilshaw & R.J. Falster. (2000) A study of oxygen dislocation interactions in CZ-Si. Materials Science and Engineering: B 73:1-3, pages 111-115.
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L. Fedina, A. Gutakovskii, A. Aseev, J. Van Landuyt & J. Vanhellemont. (1999) Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in-situ Electron Irradiation in an HREM. physica status solidi (a) 171:1, pages 147-158.
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V. Gopal, T. P. Chin, A. L. Vasiliev, J. M. Woodall & E. P. Kvam. (2011) Microstructural and Electrical Characterization of Misfit Dislocations at the InAs/GaP Heterointerface. MRS Proceedings 500.
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Mark Mostoller, M. F. Chisholm & Theodore Kaplan. (1994) Edge-dislocation intersections in diamond cubic crystals. Physical Review B 50:16, pages 12183-12186.
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Mark Mostoller, M. F. Chisholm & Theodore Kaplan. (1994) New extended point defect structure in diamond cubic crystals. Physical Review Letters 72:10, pages 1494-1497.
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Fred Y. Chen, Alexander H. King, Robert F. Salat & Glenn J. Fricano. (2011) TEM Study of Growth Defects in CVD Diamond Films. MRS Proceedings 363.
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A.S. Nandedkar. (1993) Atomistic simulation of formation of misfit dislocations if f.c.c. heterostructures. Acta Metallurgica et Materialia 41:12, pages 3455-3462.
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Theodore Kaplan, M. F. Chisholm & Mark Mostoller. (2011) Simulations of the Dislocation Array at Ge/Si Interfaces. MRS Proceedings 319.
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K. Jagannadham & J. Narayan. (2011) Grain Boundary Structure and Properties of High-T c Superconductors . MRS Proceedings 275.
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S. Sharan & J. Narayan. 1992. Concise Encyclopedia of Semiconducting Materials & Related Technologies. Concise Encyclopedia of Semiconducting Materials & Related Technologies 414 427 .
J Narayan & S Sharan. (1991) Mechanism of formation of 60° and 90° misfit dislocations in semiconductor heterostructures. Materials Science and Engineering: B 10:4, pages 261-267.
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Dimitris Maroudas & Robert A. Brown. (2011) Constitutive modeling of the effects of oxygen on the deformation behavior of silicon. Journal of Materials Research 6:11, pages 2337-2352.
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K. Rajan, E. Fitzgerald, K. Jagannadham & W. A. Jesser. (1991) Misfit accommodation at epitaxial interfaces. Journal of Electronic Materials 20:7, pages 861-867.
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K. Jagannadham & J. Narayan. (1991) A comparative study of grain boundary structure and critical current density in 123-YBaCuO, 2212-BiSrCaCuO and 2223-TlBaCaCuO high temperature superconductors. Materials Science and Engineering: B 8:3, pages 201-218.
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K. Jagannadham & J. Narayan. (1991) Critical thickness during two-dimensional and three-dimensional epitaxial growth in semiconductor heterostructures. Materials Science and Engineering: B 8:2, pages 107-124.
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K. Jagannadham & J. Narayan. (1991) Grain boundary modeling in high critical temperature superconductors. Materials Science and Engineering: B 8:1, pages 5-21.
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A. S. Nandedkar, G. R. Srinivasan & C. S. Murthy. (1991) Formation and structure of misfit dislocations. Physical Review B 43:9, pages 7308-7311.
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Eric P. Kvam. (2011) Nucleation of Dislocations in Strained Epitaxial Layers. MRS Proceedings 221.
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J. Narayan. (2011) Dislocations, twins, and grain boundaries in CVD diamond thin films: Atomic structure and properties. Journal of Materials Research 5:11, pages 2414-2423.
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Dimitrios Maroudas & Robert A. Brown. (2011) Analysis of Oxygen Gettering and Dislocation Locking in Silicon. MRS Proceedings 209.
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A.S. Nandedkar, C.S. Murthy & G.R. Srinivasan. (2011) Atomistic Simulation of Formation and Structure of Misfit Dislocations. MRS Proceedings 202.
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A.S. Nandedkar & J. Narayan. (1989) Atomic structure of 60° and 90° dislocations in Ge/Si systems and critical phenomena. Materials Science and Engineering: A 113, pages 51-56.
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M.S. Duesbery, D.J. Michel & B. Joos. (2011) Molecular Dynamics studies of Dislocations in SI. MRS Proceedings 163.
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A. S. Nandedkar, S. Sharan & J. Narayan. (2011) Atomic Structure of Dislocations and Interfaces in Semiconductor Heterostructures. MRS Proceedings 159.
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D. J. Eaglesham, D. M. Maher, E. P. Kvam, J. C. Bean & C. J. Humphreys. (1989) New Source of Dislocations in Strained Epitaxial Layers . Physical Review Letters 62:2, pages 187-190.
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Y.-H. Chiao & D.R. Clarke. (1989) Direct observation of dislocation emission from crack tips in silicon at high temperatures. Acta Metallurgica 37:1, pages 203-219.
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J. Narayan, S. Sharan, A.R. Srivatsa & A.S. Nandedkar. (1988) Defects and interfaces in heterostructures. Materials Science and Engineering: B 1:1, pages 105-117.
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A. S. Nandedkar & J. Narayan. (2011) Atomic Structure of a 60° Dislocation in Bulk Silicon and Germanium, and at Ge/Si Interface.. MRS Proceedings 141.
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