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Philosophical Magazine A Volume 55, 1987 - Issue 2
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Dislocation transmission through ∑ = 9 symmetrical tilt boundaries in silicon and germanium

II. Dynamic and crystallographic analysis

A. Jacques Laboratoire de Physique du Solide, associé au CNRS 155, Institut National Polytechnique de Lorraine, Ecole Nationale Supérieure de la Métallurgie et de l'Industrie des Mines, Parc de Saurupt, 54042, Nancy, France
,
A. George Laboratoire de Physique du Solide, associé au CNRS 155, Institut National Polytechnique de Lorraine, Ecole Nationale Supérieure de la Métallurgie et de l'Industrie des Mines, Parc de Saurupt, 54042, Nancy, France
,
X. Baillin CEA, IRDI, DMECN, Département de Métallurgie, Centre d'Etudes Nucléaires de Grenoble, 85X, 38041, Grenoble, France
&
J. J. Bacmann CEA, IRDI, DMECN, Département de Métallurgie, Centre d'Etudes Nucléaires de Grenoble, 85X, 38041, Grenoble, France
Pages 165-181 | Received 14 Jul 1986, Accepted 08 Aug 1986, Published online: 20 Aug 2006

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A. Taisne, B. Decamps & L. Priester. (2002) Interaction of lattice dislocations with the α-γ interphase interface in a stainless steel bicrystal. Philosophical Magazine A 82:15, pages 2791-2804.
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S. Zghal & A. Couret. (2001) Transmission of the deformation through γ-γ interfaces in a polysynthetically twinned TiAl alloy II. Twin interfaces (180° rotational). Philosophical Magazine A 81:2, pages 365-382.
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S. Zghal, A. Coujou & A. Couret. (2001) Transmission of the deformation through γ-γ interfaces in a polysynthetically twinned TiAl alloy I. Ordered domain interfaces (120° rotational). Philosophical Magazine A 81:2, pages 345-364.
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M. Polcarova, J. Gemperlova, J. Bradler, A. Jacques, A. George & L. Priester. (1998) In-situ observation of plastic deformation of Fe-Si bicrystals by white-beam synchrotron radiation topography. Philosophical Magazine A 78:1, pages 105-130.
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S. Poulat, B. Décamps & L. Priester. (1998) Weak-beam transmission electron microscopy study of dislocation accommodation processes in nickel Σ = 3 grain boundaries. Philosophical Magazine A 77:6, pages 1381-1397.
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X. Baillin, J. Pelissier, A. Jacques & A. George. (1990) Direct evidence of dislocation transmission through ∊= 9 grain boundaries in germanium and silicon by in situ high-voltage electron microscopy observations. Philosophical Magazine A 61:2, pages 329-362.
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M. Elkajbaji & J. Thibault-Desseaux. (1988) Interactions of deformation-induced dislocations with Σ = 9(122) grain boundaries in Si studied by HREM. Philosophical Magazine A 58:2, pages 325-345.
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M. Martinez-Hernandez, H.O. K. Kirchner, A. Korner, A. George & J.P. Michel. (1987) Dislocations at grain boundaries in deformed silicon. Philosophical Magazine A 56:5, pages 641-658.
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X. Baillin, J. Pelissier, J.J. Bacmann, A. Jacques & A. George. (1987) Dislocation transmission through ∑ = 9 symmetrical tilt boundaries in silicon and germanium. Philosophical Magazine A 55:2, pages 143-164.
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Lu-Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Wolfram Miller & Kozo Fujiwara. (2018) In situ observation of interaction between grain boundaries during directional solidification of Si. Scripta Materialia 148, pages 37-41.
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Jany Thibault, Jean‐Luc Rouviere & Alain Bourret. 2006. Materials Science and Technology. Materials Science and Technology.
. 2011. Grain Boundaries and Crystalline Plasticity. Grain Boundaries and Crystalline Plasticity 47 107 .
Gianpietro Moras, Rathin Choudhury, James R. Kermode, Gabor CsÁnyi, Michael C. Payne & Alessandro De Vita. 2010. Trends in Computational Nanomechanics. Trends in Computational Nanomechanics 1 23 .
Daniel Caillard & Alain Couret. (2009) The Hall-Petch law investigated by means of in situ straining experiments in lamellar TiAl and deformed Al. Microscopy Research and Technique 72:3, pages 261-269.
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A. Gemperle, N. Zárubová & J. Gemperlová. (2005) Reactions of slip dislocations with twin boundary in Fe-Si bicrystals. Journal of Materials Science 40:12, pages 3247-3254.
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J. P. Couzinié, B. Décamps & L. Priester. (2004) On the first steps of grain boundary dislocation stress relaxations in copper. Zeitschrift für Metallkunde 95:4, pages 223-225.
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A. Jacques, A. George, M. Polcarova & J. Bradler. (2003) Dislocation transmission through a Σ=3 grain boundary in Fe 6 at.% Si: In situ experiments in compression specimen. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 200, pages 261-266.
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Jany Thibault, Jean-Luc Rouviere & Alain Bourret. 2000. Handbook of Semiconductor Technology Set. Handbook of Semiconductor Technology Set 377 451 .
Jany Thibault, Jean‐Luc Rouviere & Alain Bourret. 2000. Handbook of Semiconductor Technology. Handbook of Semiconductor Technology 377 451 .
Jany. Thibault, X. Baillin, J. Pelissier, J.L. Putaux & H.M. Michaud. (2011) In-Situ 1Mev Tem and Hrem Study of the Deformation and the Transformation of Symmetrical Tilt Grain Boundaries in Ge and Si.. MRS Proceedings 319.
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Ian Baker & Fuping Liu. (2011) On In-Situ Study of Dislocation/Grain Boundary Interactions Using X-ray Topography and Tem . MRS Proceedings 319.
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H. A. Benhorma, A. Jacques, A. George & X. Baillin. (1992) Velocity of grain-boundary dislocations in a Σ = 9 bicrystal of silicon. Physica Status Solidi (a) 131:2, pages 539-554.
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S. L. Hyland, C. Dubé & D. G. Ast. (1990) Investigation of the reversibility of deformation in silicon sheets. Journal of Electronic Materials 19:9, pages 873-879.
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A. Jacques, A. George & X. Baillin. 1989. Strength of Metals and Alloys (ICSMA 8). Strength of Metals and Alloys (ICSMA 8) 245 250 .
X. Baillin, A. Jacques & A. George. 1989. Polycrystalline Semiconductors. Polycrystalline Semiconductors 34 39 .
J. Thibault-Desseaux. 1989. Semiconductor Silicon. Semiconductor Silicon 160 173 .
J. Thibault-Desseaux, J. L. Putaux & H. O. K. Kirchner. 1989. Point and Extended Defects in Semiconductors. Point and Extended Defects in Semiconductors 153 164 .
W. Skrotzki, H. Wendt, C.B. Carter & D.L. Kohlstedt. (1988) The relation between the structure and mechanical properties of A σ = 51 tilt boundary in germanium. Acta Metallurgica 36:4, pages 983-994.
Crossref
Jany Thibault-Desseaux, J.L. Putaux, A. Jacques & M. Elkajbaji. (2011) Mechanical Behaviour of the Σ=9(122) Grain Boundary in Silicon Studied by Hrem. MRS Proceedings 122.
Crossref
A. George. (1988) Hardening mechanisms at grain boundaries: a microscopic approach. Revue de Physique Appliquée 23:4, pages 479-490.
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