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Philosophical Magazine A Volume 57, 1988 - Issue 1
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Original Articles

On the yield point of floating-zone silicon single crystals II. A quantitative analysis of the dislocation structure at the lower yield point

Abdellatif Oueldennaoua Laboratoire de Physique du Solide, Unité Associée au CNRS No 155, Institut National Polytechnique de Lorraine, Ecole des Mines de Nancy, Parc de Saurupt, 54042, Nancy, France
,
Rafik Allem Laboratoire de Physique du Solide, Unité Associée au CNRS No 155, Institut National Polytechnique de Lorraine, Ecole des Mines de Nancy, Parc de Saurupt, 54042, Nancy, France
,
Amand George Laboratoire de Physique du Solide, Unité Associée au CNRS No 155, Institut National Polytechnique de Lorraine, Ecole des Mines de Nancy, Parc de Saurupt, 54042, Nancy, France
&
Jean-Pierre Michel Laboratoire de Physique du Solide, Unité Associée au CNRS No 155, Institut National Polytechnique de Lorraine, Ecole des Mines de Nancy, Parc de Saurupt, 54042, Nancy, France
Pages 51-77 | Received 12 Feb 1987, Accepted 11 May 1987, Published online: 20 Aug 2006

Citations (12)

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Read on this site (5)

Mohamed Azzaz, Jean-Pierre Michel & Amand George. (1996) Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide 2. S doped InP. Philosophical Magazine A 73:3, pages 601-624.
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M'barek Omri, Jean-Pierre Michel & Amand George. (1990) Plastic deformation of gallium antimonide single crystals: Yield stresses, activation parameters and dislocation structures. Philosophical Magazine A 62:2, pages 203-225.
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P. Borvin, J. Rabier & H. Garem. (1990) Plastic deformation of GaAs single crystals as a function of electronic doping I: Medium temperatures (150–650°C). Philosophical Magazine A 61:4, pages 619-645.
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M. Mundschau, E. Bauer, W. Telieps & W. świech. (1990) Atomic step and defect structure on surfaces of Si{100} and Si{111} observed by low-energy electron microscopy. Philosophical Magazine A 61:2, pages 257-280.
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Rafik Allem, Jean-Pierre Michel & Amand George. (1989) On the yield point of floating-zone silicon single crystals III. The evolution of the dislocation structure through the yield point at low temperature. Philosophical Magazine A 59:2, pages 273-302.
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Articles from other publishers (7)

J. Cochard, I. Yonenaga, M. M'Hamdi & Z.L. Zhang. (2013) A novel constitutive model for semiconductors: The case of silicon. Journal of the Mechanics and Physics of Solids 61:12, pages 2402-2432.
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J. Cochard, I. Yonenaga, S. Gouttebroze, M. M’Hamdi & Z. L. Zhang. (2010) Constitutive modeling of intrinsic silicon monocrystals in easy glide. Journal of Applied Physics 107:3.
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J. Rabier, L. Pizzagalli & J.L. Demenet. 2010. 47 108 .
G. Dour & Y. Estrin. (2002) Dislocation Motion in Crystals With a High Peierls Relief: A Unified Model Incorporating the Lattice Friction and Localized Obstacles. Journal of Engineering Materials and Technology 124:1, pages 7-12.
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I. Zongo & J. L. Farvacque. (1994) Connection between the Schoeck and the Haasen analysis of thermally activated dislocation glide in semiconductors. Physica Status Solidi (a) 142:2, pages 383-388.
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A. Rohatgi, P. Sana, M.S. Ramanachalam, J. Salami & W.B. Carter. (1993) Investigation of the effects of aluminum treatment on silicon solar cells. Investigation of the effects of aluminum treatment on silicon solar cells.
Hans Siethojf. 1992. The Mechanical Properties of Semiconductors. The Mechanical Properties of Semiconductors 143 187 .

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