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Philosophical Magazine A Volume 60, 1989 - Issue 3
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Original Articles

Climb of dissociated dislocations in silicon

J. Thibault-Desseaux Departement Recherche Fondamentale-Service de Physique, Centre d'Etudes Nucléaires, 85X-38041, Grenoble Cedex, France
,
H. O. K. Kirchner Institute of Solid State Physics, University of Vienna, A-1090, Boltzmanngasse 5, Vienna, Austria
&
J. L. Putaux Departement Recherche Fondamentale-Service de Physique, Centre d'Etudes Nucléaires, 85X-38041, Grenoble Cedex, France
Pages 385-400 | Received 23 Aug 1988, Accepted 25 Oct 1988, Published online: 13 Sep 2006

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Martin Couillard, Guillaume Radtke & Gianluigi A. Botton. (2013) Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy. Philosophical Magazine 93:10-12, pages 1250-1267.
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S. Youssef & R. Bonnet. (2006) A dissociated dislocation in an ultrathin silicon plate. Philosophical Magazine 86:20, pages 3077-3088.
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ParM. Loubradou, R. Bonnet & J.M. Péenisson. (1994) Structures atomiques de dislocations à l'intersection de fautes d'empilement dans un cristal c.f.c. à base (Ni, Co). Philosophical Magazine Letters 69:2, pages 53-59.
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X.G. Ning, H.G. Xu, H.Q. Ye, J. Zhu, K.Y. Hu, Y.X. Lu & J. Bi. (1991) Transmission electron microscopy study on microstructures of an Al(Li, Cu, Mg, Zr)-SiCw composite. Philosophical Magazine A 63:4, pages 727-746.
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F.H.J. Laidlaw, R. Beanland, D. Fisher & P.L. Diggle. (2020) Point defects and interstitial climb of 90° partial dislocations in brown type IIa natural diamond. Acta Materialia 201, pages 494-503.
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Ichiro Yonenaga. (2020) Atomic structures and dynamic properties of dislocations in semiconductors: current progress and stagnation. Semiconductor Science and Technology 35:4, pages 043001.
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Helmut Alexander & Helmar Teichler. 2006. Materials Science and Technology. Materials Science and Technology.
H. Wang, D. Xu, R. Yang & P. Veyssière. (2008) The transformation of edge dislocation dipoles in aluminium. Acta Materialia 56:17, pages 4608-4620.
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S. Xie, A.M. Russell, A.T. Becker & K.A. GschneidnerJr.Jr.. (2008) Dislocation core structures in YAg, a ductile B2 CsCl-type intermetallic compound. Scripta Materialia 58:12, pages 1066-1069.
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John C.H. Spence. 2007. 419 452 .
M.J. Mills, N.L. Baluc & P.M. Sarosi. (2006) HRTEM of dislocation cores and thin‐foil effects in metals and intermetallic compounds. Microscopy Research and Technique 69:5, pages 317-329.
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Kei Asaoka, Takeshi Umeda, Shigeo Arai & Hiroyasu Saka. (2005) Direct evidence for shuffle dislocations in Si activated by indentations at 77K. Materials Science and Engineering: A 400-401, pages 93-96.
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Helmut Alexander & Helmar Teichler. 2000. Handbook of Semiconductor Technology Set. Handbook of Semiconductor Technology Set 291 376 .
Helmut Alexander & Helmar Teichler. 2000. Handbook of Semiconductor Technology. Handbook of Semiconductor Technology 291 376 .
J.P. HIRTH. 1996. Physical Metallurgy. Physical Metallurgy 1831 1875 .
Yu. S. Lelikov, Yu. T. Rebane, S. Ruvimov, A. A. Sitnikova, D. V. Tarhin & Yu. G. Shreter. (2006) A Classification of the Dislocation‐Related Photoluminescencence in Silicon. physica status solidi (b) 172:1, pages 53-63.
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Hans Siethojf. 1992. The Mechanical Properties of Semiconductors. The Mechanical Properties of Semiconductors 143 187 .
Kyoko Minowa, Ichiro Yonenaga & Koji Sumino. (1991) Climb of extended dislocations in silicon caused by oxygen precipitation. Materials Letters 11:5-7, pages 164-170.
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H. Siethoff, H. G. Brion & W. Schröter. (1991) Plastic Deformation of GaSb and the Influence of Stacking-Fault Energy on Dynamical Recovery of Semiconductors. Physica Status Solidi (a) 125:1, pages 191-201.
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H. Alexander. 1991. Polycrystalline Semiconductors II. Polycrystalline Semiconductors II 2 12 .

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