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Philosophical Magazine A Volume 59, 1989 - Issue 6
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Original Articles

Slip and twinning in high-stress-deformed GaAs and the influence of doping

Y. Androussi Laboratoire de Structure et Propriétés de l'Etat Solide, Université des Sciences et Techniques de Lille Flandres-Artois, B[acaron]timent, C6 59655, Villeneuve d'Ascq, Cedex, France
,
G. Vanderschaeve Laboratoire de Structure et Propriétés de l'Etat Solide, Université des Sciences et Techniques de Lille Flandres-Artois, B[acaron]timent, C6 59655, Villeneuve d'Ascq, Cedex, France; I.N.S.A. de Toulouse, Laboratoire de Physique des Solides, Avenue de Rangueil, 31077, Toulouse, Cedex, France
&
A. Lefebvre Laboratoire de Structure et Propriétés de l'Etat Solide, Université des Sciences et Techniques de Lille Flandres-Artois, B[acaron]timent, C6 59655, Villeneuve d'Ascq, Cedex, France
Pages 1189-1204 | Received 05 Jul 1988, Accepted 03 Oct 1988, Published online: 20 Aug 2006

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Fredrik Östlund, Philip R. Howie, Rudy Ghisleni, Sandra Korte, Klaus Leifer, William J. Clegg & Johann Michler. (2011) Ductile–brittle transition in micropillar compression of GaAs at room temperature. Philosophical Magazine 91:7-9, pages 1190-1199.
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N. K. Mukhopadhyay & P. Paufler. (2006) Micro- and nanoindentation techniques for mechanical characterisation of materials. International Materials Reviews 51:4, pages 209-245.
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I. Yonenaga & T. Suzuki. (2002) Indentation hardnesses of semiconductors and a scaling rule. Philosophical Magazine Letters 82:10, pages 535-542.
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K. Edagawa, H. Koizumi, Y. Kamimura & T. Suzuki. (2000) Temperature dependence of the flow stress of III–V compounds. Philosophical Magazine A 80:11, pages 2591-2608.
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A. Moulin, M. Condat & L.P. Kubin. (1999) Perfect and partial Frank-Read sources in silicon: A simulation. Philosophical Magazine A 79:8, pages 1995-2011.
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A. Lefebvre & C. Ulhaq-bouillet. (1994) Multiplication of misfit dislocations in InxGa1−xAs/GaAs heterostructures. Philosophical Magazine A 70:6, pages 999-1012.
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C. Ulhaq-bouillet, A. Lefebvre & J. Di Persio. (1994) Cross-slip in the first stages of plastic relaxation in InxGa1−xAs/GaAs heterostructures. Philosophical Magazine A 69:5, pages 995-1015.
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A. Lefebvre, C. Herbeaux & J. Di Persio. (1991) Interactions of misfit dislocations in In Ga1- As/GaAs interfaces. Philosophical Magazine A 63:3, pages 471-485.
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Dzevad Hadzihafizovic. (2024) Physical Metallurgy Crystal Defects- Dislocations in Metals. SSRN Electronic Journal.
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R J Wang, C Y Wang, Y T Feng & Chun Tang. (2018) Mechanical responses of a -axis GaN nanowires under axial loads . Nanotechnology 29:9, pages 095707.
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Y. T. Zhou, Y. B. Xue, D. Chen, Y. J. Wang, B. Zhang & X. L. Ma. (2014) Atomic-scale configurations of synchroshear-induced deformation twins in the ionic MnS crystal. Scientific Reports 4:1.
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Cédric Pouvreau, Kilian Wasmer, Haïcha Hessler-Wyser, Jean-Daniel Ganière, Jean-Marc Breguet, Johann Michler, Daniel Schulz & Jacques Henri Giovanola. (2013) Nanoindentation cracking in gallium arsenide: Part II. TEM investigation. Journal of Materials Research 28:20, pages 2799-2809.
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Sheng-Rui Jian, T.-H. Sung, J. C. Huang & Jenh-Yih Juang. (2012) Deformation behaviors of InP pillars under uniaxial compression. Applied Physics Letters 101:15.
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Anthony Kelly & Kevin M. Knowles. 2012. Crystallography and Crystal Defects. Crystallography and Crystal Defects 197 239 .
B. Kedjar, L. Thilly, J.-L. Demenet & J. Rabier. (2010) Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation. Acta Materialia 58:4, pages 1426-1440.
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Johann Michler, Kilian Wasmer, Stephan Meier, Fredrik Östlund & Klaus Leifer. (2007) Plastic deformation of gallium arsenide micropillars under uniaxial compression at room temperature. Applied Physics Letters 90:4.
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M. Reibold, A. Belger, N. K. Mukhopadhyay, P. Gille & P. Paufler. (2005) The impact of nanoindentation at room temperature upon the real structure of decagonal AlCoNi quasicrystals. physica status solidi (a) 202:12, pages 2267-2276.
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R. Lohonka, G. Vanderschaeve & J. Kratochvı́l. (2002) Modelling of the plastic behaviour of III–V compound semiconductors during compressive tests. Materials Science and Engineering: A 337:1-2, pages 50-58.
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J.W. CHRISTIAN. 2002. The Theory of Transformations in Metals and Alloys. The Theory of Transformations in Metals and Alloys 859 960 .
S. Branchu, F. Pailloux, H. Garem, J. Rabier & J. L. Demenet. (1999) Partial Dislocation Source in InSb: A New Mechanism. physica status solidi (a) 171:1, pages 59-65.
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Hans Georg Brion & Hans Siethoff. (1998) Yield point of as-grown and predeformed GaAs:Zn. Journal of Applied Physics 84:9, pages 4885-4890.
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S. Branchu, H. Garem, J. Rabier & J. L. Demenet. (1998) Plasticity of InSb at Low Temperature: Analysis of Microstructures by Transmission Electron Microscopy. physica status solidi (a) 167:1, pages 89-106.
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J te Nijenhuis, H.F.J.M van Well, M.M.G Bongers & L.J Giling. (1998) Dissociated V-shaped dislocation model for the relaxation of strained single heterostructures. Materials Science and Engineering: B 52:1, pages 17-24.
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G. Lacey, C.R. Whitehouse, P.J. Parbrook, A.G. Cullis, A.M. Keir, P. Möck, A.D. Johnson, G.W. Smith, G.F. Clark, B.K. Tanner, T. Martin, B. Lunn, J.H.C. Hogg, M.T. Emeny, B. Murphy & S. Bennett. (1998) In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system. Applied Surface Science 123-124, pages 718-724.
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J te Nijenhuis, P J van der Wel, E R H van Eck & L J Giling. (1996) Misfit dislocation formation in lattice-mismatched III - V heterostructures grown by metal - organic vapour phase epitaxy. Journal of Physics D: Applied Physics 29:12, pages 2961-2970.
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S. Koubaïti, J.J. Couderc, C. Levade & G. Vanderschaeve. (1996) Vickers indentation on the {001} faces of ZnS sphalerite under UV illumination and in darkness. Crack patterns and rosette microstructure. Acta Materialia 44:8, pages 3279-3291.
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J.W. Christian & S. Mahajan. (1995) Deformation twinning. Progress in Materials Science 39:1-2, pages 1-157.
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M. Azzaz, J. P. Michel, A. Jacques & A. George. (1993) On the Formation of Extended Stacking Faults with Extrinsic Character in Deformed Indium Phosphide. Physica Status Solidi (a) 137:2, pages 401-410.
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P. Pirouz & J.W. Yang. (1993) Polytypic transformations in SiC: the role of TEM. Ultramicroscopy 51:1-4, pages 189-214.
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Peter Paufler, Gerald Wagner & Katrin Grosse. (2006) Defect Structure in Te‐doped GaAs single Crystals after Plastic Deformation (I). Twins and Stacking Faults. Crystal Research and Technology 28:1, pages 3-10.
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G Vanderschaeve, D Caillard & J.P Peyrade. (1992) Direct observation of microtwin formation at crack tips in InP. Scripta Metallurgica et Materialia 26:4, pages 609-614.
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S. Mahajan. 1992. The Mechanical Properties of Semiconductors. The Mechanical Properties of Semiconductors 231 266 .
Hans Siethojf. 1992. The Mechanical Properties of Semiconductors. The Mechanical Properties of Semiconductors 143 187 .
C. Levade, J.J. Couderc, G. Vanderschaeve, D. Caillard & A. Couret. (1991) TEM in-situ observation of recombination-enhanced mobility of dislocations in II–VI compounds. Applied Surface Science 50:1-4, pages 119-124.
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P. Pirouz & P.M. Hazzledine. (1991) Cross-slip and twinning in semiconductors. Scripta Metallurgica et Materialia 25:5, pages 1167-1172.
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