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Philosophical Magazine A Volume 60, 1989 - Issue 1
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Original Articles

Microstructure of the Pd–GaAs(001) interfacial reaction

Y. C. Zhao Fundamental Physics Centre, University of Science and Technology of China, Hefei, Anhui, P.R. China; Polish Academy of Sciences, High Pressure Research Centre, ul. Sokolowska 29/37, 01-142, Warszawa, Poland
,
Z. Q. Wu Fundamental Physics Centre, University of Science and Technology of China, Hefei, Anhui, P.R. China
&
S. Y. Zhang Structure Research Laboratory, University of Science and Technology of China, Hefei, Anhui, P.R. China
Pages 63-81 | Received 16 Jun 1988, Accepted 21 Jul 1988, Published online: 20 Aug 2006

Citations (4)

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Read on this site (1)

T-J. Kim & P.H. Holloway. (1997) Ohmic contacts to GaAs epitaxial layers. Critical Reviews in Solid State and Materials Sciences 22:3, pages 239-273.
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Articles from other publishers (3)

Tae-Jie Kim & Paul H. Holloway. 2000. Processing of Wide Band Gap Semiconductors. Processing of Wide Band Gap Semiconductors 80 150 .
B.M Henry, A.E Staton-Bevan, V.K.M Sharma & M.A Crouch. (1997) A SIMS and TEM investigation of Au/Ti/Pd solid state Ohmic contacts on p-GaAs. Applied Surface Science 108:4, pages 485-493.
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Y. C. Zhao & Z. Q. Wu. (1991) Reactions in Pd/GaAs(001) contacts at 7×108 Pa pressure. Applied Physics Letters 58:4, pages 349-351.
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