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Philosophical Magazine A Volume 59, 1989 - Issue 3
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Original Articles

Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations

J. L. Demenet Laboratoire de Métallurgie Physique, U.A., 131, CNRS 40 Avenue du Recteur Pineau, 86022, Poitiers, Cedex, France
,
P. Grosbras Laboratoire de Métallurgie Physique, U.A., 131, CNRS 40 Avenue du Recteur Pineau, 86022, Poitiers, Cedex, France
,
H. Garem Laboratoire de Métallurgie Physique, U.A., 131, CNRS 40 Avenue du Recteur Pineau, 86022, Poitiers, Cedex, France
&
J. C. Desoyer Laboratoire de Métallurgie Physique, U.A., 131, CNRS 40 Avenue du Recteur Pineau, 86022, Poitiers, Cedex, France
Pages 501-518 | Received 09 Feb 1988, Accepted 09 May 1988, Published online: 30 Aug 2006

Citations (16)

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Read on this site (3)

Yu-Min Juan & Efthimios Kaxiras. (1996) Generalized stacking fault energy surfaces and dislocation properties of silicon: A first-principles theoretical study. Philosophical Magazine A 74:6, pages 1367-1384.
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S.A. Erofeeva. (1994) On the mobility of dislocations in semiconductors. Philosophical Magazine A 70:6, pages 943-950.
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P. Borvin, J. Rabier & H. Garem. (1990) Plastic deformation of GaAs single crystals as a function of electronic doping II: Low temperatures (20–300°C). Philosophical Magazine A 61:4, pages 647-672.
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Articles from other publishers (13)

Nathaniel Burbery, Raj Das & George Ferguson. (2017) Mobility of dissociated mixed dislocations under an Escaig stress. Modelling and Simulation in Materials Science and Engineering 25:4, pages 045001.
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Junjie Zhang, Jianguo Zhang, Zhanfeng Wang, Alexander Hartmaier, Yongda Yan & Tao Sun. (2017) Interaction between phase transformations and dislocations at incipient plasticity of monocrystalline silicon under nanoindentation. Computational Materials Science 131, pages 55-61.
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Y. Q. Wang, W. S. Liang & G. G. Ross. (2011) Stacking Fault Energy of Si Nanocrystals Embedded in . ISRN Nanotechnology 2011, pages 1-3.
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Shanling Wang & Pirouz Pirouz. (2007) Mechanical properties of undoped GaAs. Part I: Yield stress measurements. Acta Materialia 55:16, pages 5500-5514.
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S. A. Shevchenko & A. N. Tereshchenko. (2007) Photoluminescence in germanium with a quasi-equilibrium dislocation structure. Physics of the Solid State 49:1, pages 28-33.
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G. Vanderschaeve & D. Caillard. (2005) Dissociation of dislocations and the mobility of partial dislocations in elemental semiconductors. physica status solidi (a) 202:5, pages 939-943.
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P. Pirouz, A. V. Samant, M. H. Hong, A. Moulin & L. P. Kubin. (2011) On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors. Journal of Materials Research 14:7, pages 2783-2793.
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L.B. Hansen, K. Stokbro, B.I. Lundqvist & K.W. Jacobsen. (1996) Dynamics of partial dislocations in silicon. Materials Science and Engineering: B 37:1-3, pages 185-188.
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L.B. Hansen, K. Stokbro, B.I. Lundqvist & K.W. Jacobsen. 1996. C,H,N and O in Si and Characterization and Simulation of Materials and Processes. C,H,N and O in Si and Characterization and Simulation of Materials and Processes 185 188 .
L. B. Hansen, K. Stokbro, B. I. Lundqvist, K. W. Jacobsen & D. M. Deaven. (1995) Nature of Dislocations in Silicon. Physical Review Letters 75:24, pages 4444-4447.
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Q. Ren, B. Joós & M. S. Duesbery. (1995) Test of the Peierls-Nabarro model for dislocations in silicon. Physical Review B 52:18, pages 13223-13228.
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B. Joós, Q. Ren & M. S. Duesbery. (1994) Peierls-Nabarro model of dislocations in silicon with generalized stacking-fault restoring forces. Physical Review B 50:9, pages 5890-5898.
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S. Dakshinamurthy & K. Rajan. (2011) Stress Orientation Dependence of Dislocation Glide in Epitaxial Films. MRS Proceedings 202.
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