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Philosophical Magazine A Volume 61, 1990 - Issue 2
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Original Articles

The plasticity of GaAs between 415 and 730°C

Hans Siethoff Physikalisches Institut der Universität Würzburg, Am Hubland, D-8700, Würzburg, F.R. Germany
,
Ralf Behrensmeier Institut für Metallphysik der Universität Göttingen, Hospitalstraße 3/5, D-3400, Göttingen, F.R. Germany
,
Karl Ahlborn IV. Physikalisches Institut der Universität Göttingen, Bunsenstraße 11-15, D-3400, Göttingen, F.R. Germany
&
Johannes Völkl Siemens Forschungslaboratorium, Paul-Gossen-Straße 100, D-8520, Erlangen, F.R. Germany
Pages 233-244 | Received 29 Mar 1989, Accepted 14 May 1989, Published online: 13 Sep 2006

Citations (21)

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Hans Siethoff. (1992) The yield point of as-grown and pre-deformed semiconductors. Philosophical Magazine Letters 66:1, pages 1-7.
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Articles from other publishers (20)

Jinbiao Pang, Hui Li, Kai Zhou & Zhu Wang. (2012) The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy. Plasma Science and Technology 14:7, pages 650-655.
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Shanling Wang & Pirouz Pirouz. (2007) Mechanical properties of undoped GaAs. Part I: Yield stress measurements. Acta Materialia 55:16, pages 5500-5514.
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P. Rudolph, Ch. Frank-Rotsch, U. Juda & F.-M. Kiessling. (2005) Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry. Materials Science and Engineering: A 400-401, pages 170-174.
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P. Rudolph. (2005) Dislocation cell structures in melt-grown semiconductor compound crystals. Crystal Research and Technology 40:1-2, pages 7-20.
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Z. Wang, H.S. Leipner, R. Krause-Rehberg, V. Bodarenko & H. Gu. (2003) Defects properties in plastically deformed silicon studied by positron lifetime measurements. Microelectronic Engineering 66:1-4, pages 358-366.
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Hans Siethoff. (2000) Homopolar band gap and thermal activation parameters of plasticity of diamond and zinc-blende semiconductors. Journal of Applied Physics 87:7, pages 3301-3305.
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Hans Georg Brion & Hans Siethoff. (1998) Yield point of as-grown and predeformed GaAs:Zn. Journal of Applied Physics 84:9, pages 4885-4890.
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H. Siethoff. (1994) Correlation between the band gap of semiconductors and thermal activation parameters of plasticity. Applied Physics Letters 65:2, pages 174-176.
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H.R. Habibi Bajguirani, C. Servant & O. Lyon. (1994) ASAXS study of the copper enriched precipitation in the 15-5PH alloy. Nanostructured Materials 4:7, pages 833-850.
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H. Siethoff. (1993) Dynamical recovery, dislocation mobility, and diffusion in undoped semiconductors. Physica Status Solidi (a) 138:2, pages 591-599.
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C.T. Tsai, M.W. Yao & Arnon Chait. (1992) Prediction of dislocation generation during Bridgman growth of GaAs crystals. Journal of Crystal Growth 125:1-2, pages 69-80.
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P. Feltham & R. Banerjee. (1992) Theory and application of microindentation in studies of glide and cracking in single crystals of elemental and compound semiconductors. Journal of Materials Science 27:6, pages 1626-1632.
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P. Schlossmacher, K. Urban & H. Rüfer. (1992) Dislocations and precipitates in gallium arsenide. Journal of Applied Physics 71:2, pages 620-629.
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Hans Siethojf. 1992. The Mechanical Properties of Semiconductors. The Mechanical Properties of Semiconductors 143 187 .
R. Behrensmeier, P. Veyssière, P. Haasen & H. G. Brion. (1991) TEM of GaAs Deformed to Steady State by Creep. Physica Status Solidi (a) 125:1, pages 167-177.
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K. Jagannadham & J. Narayan. (1991) Critical thickness during two-dimensional and three-dimensional epitaxial growth in semiconductor heterostructures. Materials Science and Engineering: B 8:2, pages 107-124.
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R. Behrensmeier, H.G. Brion, H. Siethoff, P. Veyssière & P. Haasen. (1991) High temperature creep and transmission electron microscopy of GaAs. Materials Science and Engineering: A 137, pages 173-176.
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R. Behrensmeier, H. G. Brion, P. Haasen & H. Siethoff. (1991) High-Temperature Creep of GaAs. Physica Status Solidi (a) 124:2, pages 447-453.
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S. Dannefaer, P. Mascher & D. Kerr. (1991) Deformation-induced defects in GaAs. Journal of Applied Physics 69:7, pages 4080-4091.
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Hans Siethoff & Ralf Behrensmeier. (1990) Plasticity of undoped GaAs deformed under liquid encapsulation. Journal of Applied Physics 67:8, pages 3673-3680.
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