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Original Articles

High-resolution electron microscopy image contrast at the CoSi2/Si(111) interface

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Pages 183-201 | Received 19 Oct 1989, Accepted 27 Nov 1989, Published online: 04 Oct 2006

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Read on this site (4)

X. Portier, R. Rizk, G. Nouet & G. Allais. (1995) High-resolution electron microscopy observations of silicon/nickel silicide interfaces in a ∑ = 25 silicon bicrystal. Philosophical Magazine A 71:5, pages 1109-1123.
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Wen-Jauh Chen & Fu-Rong Chen. (1993) The atomic structure of Σ = 1 and Σ = 3 NiSi2/Si interfaces. Philosophical Magazine A 68:3, pages 605-630.
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A. Catana, P.E. Schmid, P. Lu & D.J. Smith. (1992) Atomic structures at cobalt silicide-silicon interfaces. Philosophical Magazine A 66:6, pages 933-956.
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C.W. T. Bulle-Lieuwma, A.F. de Jong & D.E. W. Vandenhoudt. (1991) Investigation of the atomic interface structure of mesotaxial Si/CoSi2(100) layers formed by high-dose implantation. Philosophical Magazine A 64:2, pages 255-280.
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Articles from other publishers (11)

X. Portier & R. Rizk. (1996) Nickel Precipitation at the Grain Boundary of a Silicon Bicrystal. Physica Status Solidi (a) 155:1, pages 125-140.
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D. P. Adams, S. M. Yalisove & D. J. Eaglesham. (1994) Interfacial and surface energetics of CoSi2. Journal of Applied Physics 76:9, pages 5190-5194.
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N. D. Browning, M. F. Chisholm & S. J. Pennycook. (1993) Atomic-resolution chemical analysis using a scanning transmission electron microscope. Nature 366:6451, pages 143-146.
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D. Hesse, P. Werner, R. Mattheis & J. Heydenreich. (1993) Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS2/Si(111) interface. Applied Physics A Solids and Surfaces 57:5, pages 415-425.
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M. Loubradou, J.M. Pénisson & R. Bonnet. (1993) Structural ledges at precipitate/matrix interfaces in a (Ni, Co) superalloy: atomic structures and elastic fields. Ultramicroscopy 51:1-4, pages 270-281.
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A. Bouzaher & R. Bonnet. (1993) Misfit dislocations arranged in a hexagonal network in anisotropic elasticity. Related displacement field and stored elastic energy. Acta Metallurgica et Materialia 41:5, pages 1595-1603.
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C.W.T. Bulle-Lieuwma. (1993) Epitaxial growth of CoSi2/Si structures. Applied Surface Science 68:1, pages 1-18.
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C. W. T. Bulle-Lieuwma, D. E. W. Vandenhoudt, J. Henz, N. Onda & H. von Känel. (1993) Investigation of the defect structure of thin single-crystalline CoSi2 (B) films on Si(111) by transmission electron microscopy. Journal of Applied Physics 73:7, pages 3220-3236.
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Wen-Jauh Chen & Fu-Rong Chen. (2011) High Resolution Electron Microscopy of ∑ =3 NiSi2 ( 1 11)(1 1 5) Si And NiSi2(2 2 1)/(001)Si Interfaces . MRS Proceedings 295.
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C. W. T. Bulle-Lieuwma, A. H. Van Ommen, D. E. W. Vandenhoudt, J. J. M. Ottenheim & A. F. de Jong. (1991) Microstructure of buried CoSi2 layers formed by high-dose Co implantation into (100) and (111) Si substrates. Journal of Applied Physics 70:6, pages 3093-3108.
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Corrie W. T. Bulle‐Lieuwma, Wim Coene & A. Frank de Jong. (2004) High‐resolution Electron Microscopy of semiconductors and metals. Advanced Materials 3:7-8, pages 368-378.
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