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Philosophical Magazine A Volume 63, 1991 - Issue 2
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Original Articles

Accommodation of misfit during the initial growth of GaAs on {111}-Si

C. Barry Carte Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California, 94304, U.S.A.; Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, N.Y., 14853, USA
,
Gre Anderso Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California, 94304, U.S.A.
&
Fernand Ponc Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California, 94304, U.S.A.
Pages 279-298 | Received 14 Dec 1989, Accepted 18 Jan 1990, Published online: 20 Aug 2006

Citations (14)

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Read on this site (5)

S.B. Sant, G.C. Weatherly & R.W. Smith. (1999) Spontaneous twin formation in ZnSe films grown by molecular beam epitaxy. Philosophical Magazine A 79:3, pages 561-575.
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H. Cerva, A. Krost, R.F. Schnabel & D. Bimberg. (1995) Interface defect structure of metal-organic chemically vapour-deposited InP and GaAs on Si(111). Philosophical Magazine A 71:5, pages 1145-1159.
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F. Ernst. (1993) Dissociation of misfit dislocation nodes in (111)GeSi/Si interfaces. Philosophical Magazine A 68:6, pages 1251-1272.
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LisaA. Tietz & C. Barry Carter. (1993) Structure of the Fe2O3–Al2O3 (1102) interface. Philosophical Magazine A 67:3, pages 729-744.
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LisaA. Tietz & C. Barry Carter. (1993) Structure of the Fe2O3–Al2O3 (0001) interface. Philosophical Magazine A 67:3, pages 699-727.
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Articles from other publishers (9)

P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson, F. Semond, G. Feuillet & C. Cornet. (2022) On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations. Journal of Applied Physics 132:16.
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Chunlin Chen, Zhongchang Wang, Takeharu Kato, Naoya Shibata, Takashi Taniguchi & Yuichi Ikuhara. (2015) Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride. Nature Communications 6:1.
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W. L. Ling, J. de la Figuera, N. C. Bartelt, R. Q. Hwang, A. K. Schmid, G. E. Thayer & J. C. Hamilton. (2004) Strain Relief through Heterophase Interface Reconstruction: . Physical Review Letters 92:11.
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F. Ernst. (1997) Interface dislocations forming during epitaxial growth of GeSi on (111) Si substrates at high temperatures. Materials Science and Engineering: A 233:1-2, pages 126-138.
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Gilles Patriarche, Armelle Girard-François, Jean-Pierre Rivière & Jacques Castaing. (1997) Transmission electron microscope observations of dislocations in heteroepitaxial layers of CdTe-(CdHg)Te on GaAs. Materials Science and Engineering: B 45:1-3, pages 76-84.
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X.J. Ning & P. Pirouz. (1996) Formation of misfit dislocations with in-plane Burgers vectors in boron diffused (111) silicon. Acta Materialia 44:5, pages 2127-2143.
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M. Loubradou, J.M. Pénisson & R. Bonnet. (1993) Structural ledges at precipitate/matrix interfaces in a (Ni, Co) superalloy: atomic structures and elastic fields. Ultramicroscopy 51:1-4, pages 270-281.
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X. J. Ning & P. Pirouz. (2011) Transition From Inclined to In-Plane 60° Misfit Dislocations in a Diffuse Interface. MRS Proceedings 319.
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F. Ernst, P. Pirouz & E. Bauser. (1992) Lattice mismatch accommodation atGeSi/{111}Si interfaces grown by liquid phase epitaxy. Physica Status Solidi (a) 131:2, pages 651-662.
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