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Philosophical Magazine A Volume 63, 1991 - Issue 6
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Original Articles

Cobalt disilicide growth and interface structure analyses

C. D'Anterroches Meneau Centre National d'Etudes des Télécommunications, CNS, Chemin du Vieux Chěne B.P. 98, F-38240, Meylan Cedex, France
&
P. Perret Centre National d'Etudes des Télécommunications, CNS, Chemin du Vieux Chěne B.P. 98, F-38240, Meylan Cedex, France
Pages 1221-1239 | Received 19 Feb 1990, Accepted 12 Jul 1990, Published online: 20 Nov 2006

Citations (7)

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Read on this site (1)

Wen-Jauh Chen & Fu-Rong Chen. (1993) The atomic structure of Σ = 1 and Σ = 3 NiSi2/Si interfaces. Philosophical Magazine A 68:3, pages 605-630.
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Articles from other publishers (6)

Yang He, C.J. Weststrate, Dan Luo, J.W. Niemantsverdriet, Kai Wu, Jian Xu, Yong Yang, Yongwang Li & Xiaodong Wen. (2021) Carbon monoxide adsorption on cobalt overlayers on a Si(1 1 1) surface studied by STM and XPS. Applied Surface Science 569, pages 151045.
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H. Zschiesche, A.P.C. Campos, C. Dominici, L. Roussel, A. Charai, D. Mangelinck & C. Alfonso. (2019) Correlated TKD/EDS - TEM - APT analysis on selected interfaces of CoSi2 thin films. Ultramicroscopy 206, pages 112807.
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M. Copel & R. M. Tromp. (1994) Nucleation of Co silicide on H passivated Si(111). Applied Physics Letters 65:24, pages 3102-3104.
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C.W.T. Bulle-Lieuwma. (1993) Epitaxial growth of CoSi2/Si structures. Applied Surface Science 68:1, pages 1-18.
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C. W. T. Bulle-Lieuwma, D. E. W. Vandenhoudt, J. Henz, N. Onda & H. von Känel. (1993) Investigation of the defect structure of thin single-crystalline CoSi2 (B) films on Si(111) by transmission electron microscopy. Journal of Applied Physics 73:7, pages 3220-3236.
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Wen-Jauh Chen & Fu-Rong Chen. (2011) High Resolution Electron Microscopy of ∑ =3 NiSi2 ( 1 11)(1 1 5) Si And NiSi2(2 2 1)/(001)Si Interfaces . MRS Proceedings 295.
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