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Philosophical Magazine A Volume 66, 1992 - Issue 4
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Original Articles

Stacking fault asymmetry in epitaxial films of mocvd znse/gaas(001)

J. L. Batstone H. H. Wills Physics Laboratory, University of Bristol, Tyndall Ave, Bristol, BS8 1TL, England; IBM Corporation, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY, 10598, USA
,
J. W. Steeds H. H. Wills Physics Laboratory, University of Bristol, Tyndall Ave, Bristol, BS8 1TL, England
&
P. J. Wright Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, England
Pages 609-620 | Received 07 Nov 1991, Accepted 16 Jan 1992, Published online: 13 Sep 2006

Citations (12)

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L.H. Kuo, L. Salamanca-riba, G. Hofler & B.J. Wu. (1995) On the generation of a cross grid of extended screw-type misfit dislocations on the ZnS Se1-x/GaAs interface. Philosophical Magazine A 71:4, pages 883-899.
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Articles from other publishers (11)

C. J. Lu, L. A. Bendersky, K. Chang & I. Takeuchi. (2003) Dissociation and evolution of threading dislocations in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3. Journal of Applied Physics 93:1, pages 512-521.
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A. Bukaluk, M. Trzciński, F. Firszt, S. Łęgowski & H. Męczyńska. (2002) Auger depth profile analysis and photoluminescence investigations of Zn1−xMgxSe alloys. Surface Science 507-510, pages 175-180.
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C.J. Lu, L.A. Bendersky, K. Chang & I. Takeuchi. (2011) HRTEM Study of the Extended Defect Structure in Epitaxial Ba 0.3 Sr 0.7 TiO 3 Thin Films Grown on (001) LaAlO 3 . MRS Proceedings 751.
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D. Litvinov, A. Rosenauer, D. Gerthsen, H. Preis, S. Bauer & E. Kurtz. (2001) On the origin of the “coffee-bean” contrast in transmission electron microscopy images of CdSe/ZnSe quantum dot structures. Journal of Applied Physics 89:7, pages 4150-4155.
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S. Rubini, E. Milocco, L. Sorba, E. Pelucchi, A. Franciosi, A. Garulli, A. Parisini, Y. Zhuang & G. Bauer. (2001) Structural and electronic properties of ZnSe/AlAs heterostructures. Physical Review B 63:15.
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T. Walter & D. Gerthsen. (2000) TEM analysis of epitaxial semiconductor layers with high stacking fault densities considering artifacts induced by the cross-section geometry. Ultramicroscopy 81:3-4, pages 279-288.
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Ching-Wu Wang. (1999) Substrate misorientation effects on Zn1−xMgxSe layers grown on GaAs(111) by molecular beam epitaxy. Journal of Crystal Growth 203:3, pages 355-361.
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S. Heun, J. J. Paggel, L. Sorba, S. Rubini, A. Franciosi, J.-M. Bonard & J.-D. Ganière. (1997) Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 15:4, pages 1279-1285.
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S. Heun, J. J. Paggel, L. Sorba, S. Rubini, A. Franciosi, J.-M. Bonard & J.-D. Ganière. (1997) Interface composition and stacking fault density in II-VI/III-V heterostructures. Applied Physics Letters 70:2, pages 237-239.
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C. Pelosi, G. Attolini, C. Bocchi, P. Franzosi, C. Frigeri, M. Berti, A. V. Drigo & F. Romanato. (1995) The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures. Journal of Electronic Materials 24:11, pages 1723-1730.
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C. Frigeri, G. Atrolini, C. Pelosi & F. Longo. (2011) Relationship Between Crystal Defects, Ge Outdiffusion and V/III Ratio in MOVPE Grown (001) GaAs/Ge. MRS Proceedings 319.
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