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Philosophical Magazine A Volume 65, 1992 - Issue 4
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Original Articles

Structure and orientation of As precipitates in GaAs grown at low temperature by molecular beam epitaxy

Alain Claverie Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA; Centre, National de la Recherche Scientifique, CEMES, 29 rue J. Marvig. BP 4347, 31055, Toulouse, France
&
Zuzanna Liliental-Weber Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA
Pages 981-1002 | Received 23 May 1991, Accepted 22 Sep 1991, Published online: 20 Aug 2006

Citations (37)

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M.R. Melloch, K. Mahalingam, N. Otsuka, J.M. Woodall & A.C. Warren. (1993) Comment on arsenic precipitate coarsening in GaAs epilayers. Philosophical Magazine A 67:6, pages 1495-1496.
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Articles from other publishers (36)

Vitalii I. Ushanov, Sergey V. Eremeev, Vyacheslav M. Silkin & Vladimir V. Chaldyshev. (2024) Plasmon Resonance in a System of Bi Nanoparticles Embedded into (Al,Ga)As Matrix. Nanomaterials 14:1, pages 109.
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Vyacheslav M. Silkin, Sergey V. Eremeev, Vitalii I. Ushanov & Vladimir V. Chaldyshev. (2023) Localized Surface Plasmon Resonance in Metamaterials Composed of As1−zSbz Semimetal Nanoparticles in AlxGa1−xAs1−ySby Semiconductor Matrix. Nanomaterials 13:8, pages 1355.
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Nikolay Bert, Vitaliy Ushanov, Leonid Snigirev, Demid Kirilenko, Vladimir Ulin, Maria Yagovkina, Valeriy Preobrazhenskii, Mikhail Putyato, Boris Semyagin, Igor Kasatkin & Vladimir Chaldyshev. (2022) Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial. Materials 15:21, pages 7597.
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V. A. Sazonov, N. I. Borgardt, V. N. Kukin & I. P. Kazakov. (2022) Electron-Microscopy Study of the Grain Structure of a Low-Temperature GaAs Epitaxial Layer Grown on Si(100) Substrate. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques 16:4, pages 490-496.
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Jingli Chen & Jun Tang. (2020) Origin of two special Raman modes in dilute nitrides. Journal of Physics D: Applied Physics 53:22, pages 225104.
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Nikolay A. Bert, Vladimir V. Chaldyshev, Nikolay A. Cherkashin, Vladimir N. Nevedomskiy, Valery V. Preobrazhenskii, Michael A. Putyato, Boris R. Semyagin, Vitaliy I. Ushanov & Maria A. Yagovkina. (2019) Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial. Journal of Applied Physics 125:14.
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Nikolay A. Bert, Vladimir V. Chaldyshev, Nikolay A. Cherkashin, Vladimir N. Nevedomskiy, Valery V. Preobrazhenskii, Michael A. Putyato, Boris R. Semyagin, Vitaliy I. Ushanov & Maria A. Yagovkina. (2019) Sb-rich nanoinclusions in an AlGaAsSb metamaterial. MRS Advances 4:5-6, pages 277-284.
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C. Frigeri, S. Bietti, G. Isella & S. Sanguinetti. (2013) Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si. Applied Surface Science 267, pages 86-89.
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V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato & B. R. Semyagin. (2009) GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process. Semiconductors 43:12, pages 1617-1621.
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A. V. Boitsov, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato & B. R. Semyagin. (2009) As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus. Semiconductors 43:2, pages 266-268.
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T. E. M. Staab, R. M. Nieminen, M. Luysberg & Th. Frauenheim. (2005) Agglomeration of As Antisites in As-Rich Low-Temperature GaAs: Nucleation without a Critical Nucleus Size. Physical Review Letters 95:12.
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R.R. Campomanes, J. Vilcarromero, J.C. Galzerani & J.H. Dias da Silva. (2005) The evolution of arsenic excess induced by thermal annealing in arsenic-rich Ga1-xAsx films. Applied Physics A 80:2, pages 267-269.
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B. Ghyselen, J.-M. Hartmann, T. Ernst, C. Aulnette, B. Osternaud, Y. Bogumilowicz, A. Abbadie, P. Besson, O. Rayssac, A. Tiberj, N. Daval, I. Cayrefourq, F. Fournel, H. Moriceau, C. Di Nardo, F. Andrieu, V. Paillard, M. Cabié, L. Vincent, E. Snoeck, F. Cristiano, A. Rocher, A. Ponchet, A. Claverie, P. Boucaud, M.-N. Semeria, D. Bensahel, N. Kernevez & C. Mazure. (2004) Engineering strained silicon on insulator wafers with the Smart CutTM technology. Solid-State Electronics 48:8, pages 1285-1296.
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B. Ghyselen, Y. Bogumilowicz, C. Aulnette, A. Abbadie, B. Osternaud, P. Besson, N. Daval, F. Andrieu, I. Cayrefourq, H. Moriceau, T. Ernst, A. Tiberj, O. Rayssac, B. Blondeau, C. Mazure, C. Lagahe-Blanchard, S. Pocas, A.-M. Cartier, J.-M. Hartmann, P. Leduc, C. Di Nardo, J.-F. Lugand, F. Fournel, M.-N. Semeria, N. Kernevez, Y. Campidelli, O. Kermarrec, Y. Morand, M. Rivoire, D. Bensahel, V. Paillard, L. Vincent, A. Claverie & P. Boucaud. (2011) Strained Silicon On Insulator wafers made by the Smart Cut™ technology. MRS Proceedings 809.
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A. Serres, G. Benassayag, M. Respaud, C. Armand, J.C. Pesant, A. Mari, Z. Liliental-Weber & A. Claverie. (2003) Structural and magnetic properties of MnAs nanoclusters formed by Mn ion implantation in GaAs. Materials Science and Engineering: B 101:1-3, pages 119-123.
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M. Toufella, C. Bonafos, G. Ben Assayag, B. de Mauduit, E. Bedel, C. Fontaine, P. Pucch, R. Carles, V. Chalddyshev & A. Claverie. (2000) A comparative study of the Ostwald ripening of As precipitates in LT-MBE grown and in As implanted GaAs. A comparative study of the Ostwald ripening of As precipitates in LT-MBE grown and in As implanted GaAs.
S. Ruvimov, Ch. Dicker, J. Washburn & Z. Liliental-Weber. (2020) Atomic Structure of Twinned As Precipitates in Lt-GaAs. Microscopy and Microanalysis 4:S2, pages 664-665.
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H. Akinaga, J. De Boeck, G. Borghs, S. Miyanishi, A. Asamitsu, W. Van Roy, Y. Tomioka & L. H. Kuo. (1998) Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters. Applied Physics Letters 72:25, pages 3368-3370.
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S. Ruvimov, Ch. Dieker, J. Washburn & Z. Liliental-Weber. (1998) Twinning of As precipitates in low-temperature GaAs during high temperature annealing. Twinning of As precipitates in low-temperature GaAs during high temperature annealing.
M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, E. R. Weber, J. Gebauer & R. Krause-Rehberg. (1998) Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs. Journal of Applied Physics 83:1, pages 561-566.
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Chanro Park, C. G. Park, Chae-Deok Lee & S. K. Noh. (1997) Structural stability of low temperature grown InGaAs/GaAs heterostructure. Journal of Electronic Materials 26:9, pages 1053-1057.
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M. Luysberg, H. Sohn, A. Prasad, P. Specht, H. Fujioka, R. Klockenbrink & E. R. Weber. (2011) Electrical And Structural Properties Of LT-GaAs: Influence Of As/Ga Flux Ratio And Growth Temperature. MRS Proceedings 442.
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M. Luysberg, H. Sohn, A. Prasad, H. Fujioka, R. Klockenbrink & E.R. Weber. (1996) Control of stoichiometry dependent defects in low temperature GaAs. Control of stoichiometry dependent defects in low temperature GaAs.
A. Claverie, H. Fujioka, L. Laânab, Z. Liliental-Weber & E.R. Weber. (1995) Synthesis of semi-insulating GaAs by As implantation and thermal annealing: structural and electrical properties. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96:1-2, pages 327-330.
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Z. Liliental-Weber, W. Swider, H. Kagiichi, A. Claverie, H. H. Wang & J. F. Whitaker. (2011) Relation Between Structure and Carrier Lifetime in As-Implanted GaAs. MRS Proceedings 378.
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Alain Claverie & Zuzanna Liliental-Weber. (1993) Extended defects and precipitates in LTGaAs, LTInAlAs and LTInP. Materials Science and Engineering: B 22:1, pages 45-54.
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A. Claverie, F. Namavar, Z. Liliental-Weber, P. Dreszer & E.R. Weber. (1993) Semi-insulating GaAs made by As implantation and thermal annealing. Materials Science and Engineering: B 22:1, pages 37-40.
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Zuzanna Liliental-Weber, F. Namavar & A. Claverie. (1993) Arsenic implantation into GaAs: a SOI technology for compound semiconductors?. Ultramicroscopy 52:3-4, pages 570-574.
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Zuzanna Liliental-Weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols & F. W. Smith. (1993) Structure and carrier lifetime in LT-GaAs. Journal of Electronic Materials 22:12, pages 1465-1469.
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Z. Liliental-Weber, K. M. Yu, J. Washburn & D. C. Look. (1993) Anomalies in annealed LT-GaAs samples. Journal of Electronic Materials 22:12, pages 1395-1399.
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M. E. Twigg, M. Fatemi & B. Tadayon. (1993) Solid-phase regrowth of amorphous GaAs grown by low-temperature molecular-beam epitaxy. Applied Physics Letters 63:3, pages 320-321.
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Zuzanna Liliental-Weber, Hyunchul Sohn & Jack Washburn. 1993. Imperfections in III/V Materials. Imperfections in III/V Materials 397 447 .
Alain Claverie & Zuzanna Liliental-Weber. 1993. Semiconductor Materials for Optoelectronics and LTMBE Materials, PROCEEDINGS OF SYMPOSIUM A ON SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS AND SYMPOSIUM B ON LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III–V MATERIALS: PHYSICS AND APPLICATIONS OF THE 1993 E-MRS SPRING CONFERENCE. Semiconductor Materials for Optoelectronics and LTMBE Materials, PROCEEDINGS OF SYMPOSIUM A ON SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS AND SYMPOSIUM B ON LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III–V MATERIALS: PHYSICS AND APPLICATIONS OF THE 1993 E-MRS SPRING CONFERENCE 45 54 .
A. Claverie, F. Namavar, Z. Liliental-Weber, P. Dreszer & E.R. Weber. 1993. Semiconductor Materials for Optoelectronics and LTMBE Materials, PROCEEDINGS OF SYMPOSIUM A ON SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS AND SYMPOSIUM B ON LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III–V MATERIALS: PHYSICS AND APPLICATIONS OF THE 1993 E-MRS SPRING CONFERENCE. Semiconductor Materials for Optoelectronics and LTMBE Materials, PROCEEDINGS OF SYMPOSIUM A ON SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS AND SYMPOSIUM B ON LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III–V MATERIALS: PHYSICS AND APPLICATIONS OF THE 1993 E-MRS SPRING CONFERENCE 37 40 .
Kin Man Yu, M. Kaminska & Z. Liliental-Weber. (1992) Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques. Journal of Applied Physics 72:7, pages 2850-2856.
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Z. Liliental-Weber, S. Gupta & F. Smith. (1992) Relation between structure and lifetime of minority carriers -in MBE GaAs grown at low temperatures. Relation between structure and lifetime of minority carriers -in MBE GaAs grown at low temperatures.

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